參數(shù)資料
型號(hào): HMC471MS8G
廠商: 美國訊泰微波有限公司上海代表處
英文描述: SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
中文描述: SiGe HBT的雙通道增益塊MMIC放大器,直流- 5.0吉赫
文件頁數(shù): 5/8頁
文件大?。?/td> 314K
代理商: HMC471MS8G
MICROWAVE CORPORATION
8 - 318
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
8
HMC471MS8G
v00.0504
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+6.0 Vdc
Collector Bias Current (Icc)
100 mA
RF Input Power (RFin)(Vcc = +4.2 Vdc)
+17 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 32.6 mW/°C above 85 °C)
2.12 W
Thermal Resistance
(junction to ground paddle)
30.7 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
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