參數(shù)資料
型號： HMC469MS8G
廠商： HITTITE MICROWAVE CORP
元件分類： 放大器
英文描述： 0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝： ULTRA SMALL, PLASTIC, MSOP-8
文件頁數(shù)： 1/8頁
文件大?。?/td> 300K
代理商： HMC469MS8G
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC469MS8G / 469MS8GE
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5 GHz
v01.0605
General Description
Functional Diagram
The HMC469MS8G & HMC469MS8GE are SiGe HBT
Dual Channel Gain Block MMIC SMT amplifiers
covering DC to 5 GHz. These versatile products
contain two gain blocks, packaged in a single 8 lead
plastic MSOP, for use as either separate cascadable
50 Ohm RF/IF gain stages, LO or PA drivers or with
both
amplifiers
combined
utilizing
external
90°
hybrids to create a high linearity driver amplifier. Each
amplifier in the HMC469MS8G(E) offers 15 dB of
gain, +18 dBm P1dB with a +34 dBm output IP3 at
850 MHz while requiring only 75 mA from a single
positive supply. The combined dual amplifier circuit
delivers up to +20 dBm P1dB with +35 dBm OIP3
for specific application bands through 4 GHz.
P1dB Output Power: +18 dBm
Gain: 15 dB
Output IP3: +34 dBm
Supply (Vs): +5V to +12V
14.9 mm2 Ultra Small 8 Lead MSOP
Typical Applications
The HMC469MS8G /HMC469MS8GE is a dual
RF/IF gain block & LO or PA driver:
Cellular / PCS / 3G
Fixed Wireless & WLAN
CATV, Cable Modem & DBS
Microwave Radio & Test Equipment
Electrical Specifications, Vs= 8.0 V, Rbias= 51 Ohm, T
A = +25° C
Note: Data taken with broadband bias tee on device output. All specifications refer to a single amplifier.
Parameter
Min.
Typ.
Max.
Units
Gain
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
12.5
11
10
9
7.5
15
13
12
11
9.5
dB
Gain Variation Over Temperature
DC - 5 GHz
0.008
0.012
dB/ °C
Input Return Loss
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 5.0 GHz
12
10
8
dB
Output Return Loss
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
14
10
8
6
dB
Reverse Isolation
DC - 5 GHz
18
dB
Output Power for 1 dB Compression (P1dB)
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
15
13
11
9.5
8
18
16
14
12.5
11
dBm
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
0.5 - 1.0 GHz
1.0 - 2.5 GHz
2.5 - 4.0 GHz
4.0 - 5.0 GHz
34
30
25
23
dBm
Noise Figure
DC - 3.0 GHz
3.0 - 5.0 GHz
4.0
5.0
dB
Supply Current (Icq)
75
mA
Features
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HMC469MS8G_09 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz
HMC469MS8GE 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP HBT 2CH 5GHZ 8-MSOP
HMC469MS8GETR 功能描述:RF Amplifier IC Cellular, CATV 0Hz ~ 5GHz 8-MSOP 制造商:analog devices inc. 系列:- 包裝:剪切帶（CT） 零件狀態(tài):過期 頻率:0Hz ~ 5GHz P1dB:18dBm 增益:15dB 噪聲系數(shù):4dB ~ 5dB RF 類型:手機，CATV 電壓 - 電源:5 V ~ 12 V 電流 - 電源:75mA 測試頻率:- 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商器件封裝:8-MSOP 標準包裝:1
HMC470ALP3E 功能描述:RF Attenuator 31dB ±0.3dB 0Hz ~ 3GHz 16-VFQFN Exposed Pad 制造商:analog devices inc. 系列:- 零件狀態(tài):在售 衰減值:31dB 容差:±0.3dB 頻率范圍:0Hz ~ 3GHz 功率（W）:- 阻抗:- 封裝/外殼:16-VFQFN 裸露焊盤 標準包裝:1
HMC470ALP3ETR 功能描述:RF Attenuator 31dB ±0.3dB 0Hz ~ 3GHz 16-VFQFN Exposed Pad 制造商:analog devices inc. 系列:- 零件狀態(tài):在售 衰減值:31dB 容差:±0.3dB 頻率范圍:0Hz ~ 3GHz 功率（W）:- 阻抗:- 封裝/外殼:16-VFQFN 裸露焊盤 標準包裝:1
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