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參數(shù)資料
| 型號： | HMC464LP5E |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 2000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 5 X 5 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, 32 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 236K |
| 代理商： | HMC464LP5E |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC464LP5 / 464LP5E
GaAs PHEMT MMIC
POWER AMPLIFIER, 2 - 20 GHz
v03.0308
General Description
Features
Functional Diagram
The HMC464LP5 & HMC464LP5E are GaAs MMIC
PHEMT Distributed Power Amplifiers in leadless 5 x
5 mm surface mount packages which operate bet-
ween 2 and 20 GHz. The amplifier provides 14 dB
of gain, +30 dBm output IP3 and +26 dBm of output
power at 1 dB gain compression while requiring
290 mA from a +8V supply. Gain flatness is good
from 2 - 18 GHz making the HMC464LP5(E) ideal for
EW, ECM and radar driver amplifiers as well as test
equipment applications. The wideband amplifier I/O’s
are internally matched to 50 Ohms.
P1dB Output Power: +26 dBm
Gain: 14 dB
Output IP3: +30 dBm
Supply Voltage: +8V @ 290 mA
50 Ohm Matched Input/Output
25 mm2 Leadless SMT Package
Typical Applications
The HMC464LP5 / HMC464LP5E is ideal for:
Telecom Infrastructure
Microwave Radio & VSAT
Military EW, ECM & C3I
Test Instrumentation
Fiber Optics
Electrical Specifications, T
A = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA
[1]
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
2.0 - 6.0
6.0 - 16.0
16.0 - 20.0
GHz
Gain
12
14
11.5
13.5
8
11
dB
Gain Flatness
±0.5
±1.0
dB
Gain Variation Over Temperature
0.025
0.035
0.03
0.04
0.05
0.06
dB/ °C
Input Return Loss
15
10
7
dB
Output Return Loss
15
9
11
dB
Output Power for 1 dB Compression
(P1dB)
23.5
26.5
22
25
18
21
dBm
Saturated Output Power (Psat)
27.5
26
24.0
dBm
Output Third Order Intercept (IP3)
32
26
22
dBm
Noise Figure
4.0
6.0
dB
Supply Current
(Idd) (Vdd= 8V, Vgg= -0.5V Typ.)
290
mA
[1] Adjust Vgg1 between -2 to 0V to achieve Idd = 290 mA typical.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC464-SX | 功能描述:RF Amplifier IC General Purpose 2GHz ~ 20GHz Die 制造商:analog devices inc. 系列:- 包裝:托盤 零件狀態(tài):有效 頻率:2GHz ~ 20GHz P1dB:26dBm 增益:16dB 噪聲系數(shù):4dB RF 類型:通用 電壓 - 電源:8V 電流 - 電源:290mA 測試頻率:- 封裝/外殼:模具 供應(yīng)商器件封裝:模具 標(biāo)準(zhǔn)包裝:2 |
| HMC465 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:ACTIVE BIAS CONTROLLER |
| HMC465_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs pHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz |
| HMC465LP5 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:ACTIVE BIAS CONTROLLER |
| HMC465LP5_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz |
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