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參數(shù)資料
| 型號(hào)： | HMC455LP3 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 1700 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, LEADLESS, PLASTIC, SMT, QFN-16 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 256K |
| 代理商： | HMC455LP3 |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC455LP3 / 455LP3E
InGaP HBT Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
v02.0605
General Description
Features
Functional Diagram
The HMC455LP3 & HMC455LP3E are high output
IP3 GaAs InGaP Heterojunction Bipolar Transistor
(HBT) watt MMIC amplifiers operating between 1.7
and 2.5 GHz. Utilizing a minimum number of external
components the amplifier provides 13 dB of gain and
+28 dBm of saturated power at 56% PAE from a single
+5 Vdc supply voltage. The high output IP3 of +42
dBm coupled with the low VSWR of 1.4:1 make the
HMC455LP3 & HMC455LP3E ideal driver amplifiers for
PCS/3G wireless infrastructures. A low cost, leadless
3x3 mm QFN surface mount package (LP3) houses
the linear amplifier. The LP3 provides an exposed
base for excellent RF and thermal performance.
Output IP3: +42 dBm
Gain: 13 dB
56% PAE @ +28 dBm Pout
+19 dBm W-CDMA Channel Power @ -45 dBc ACP
3x3 mm QFN SMT Package
Electrical Specifications, T
A = +25° C, Vs= +5V
Typical Applications
This amplifier is ideal for high linearity applications:
Multi-Carrier Systems
GSM, GPRS & EDGE
CDMA & WCDMA
PHS
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
1.7 - 1.9
1.9 - 2.2
2.2 - 2.5
GHz
Gain
11.5
13.5
10.5
13
9
11.5
dB
Gain Variation Over Temperature
0.012
0.02
0.012
0.02
0.012
0.02
dB / °C
Input Return Loss
13
15
10
dB
Output Return Loss
10
18
15
dB
Output Power for 1dB Compression (P1dB)
24
27
24.5
27.5
23
26
dBm
Saturated Output Power (Psat)
28.5
28
27
dBm
Output Third Order Intercept (IP3)
37
40
39
42
37
40
dBm
Noise Figure
7
6
dB
Supply Current (Icq)
150
mA
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| HMC460LC5 | 0 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC461LP3 | 1700 MHz - 2200 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| HMC461LP3E | 1700 MHz - 2200 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| HMC462 | 2000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC455LP3_06 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:InGaP HBT Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz |
| HMC455LP3_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:InGaP HBT ? Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz |
| HMC455LP3E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP HBT HI IP3 16-QFN |
| HMC455LP3ETR | 功能描述:RF Amplifier IC General Purpose 1.7GHz ~ 2.5GHz 16-QFN (3x3) 制造商:analog devices inc. 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 頻率:1.7GHz ~ 2.5GHz P1dB:27.5dBm 增益:13dB 噪聲系數(shù):6dB ~ 7db RF 類型:通用 電壓 - 電源:5V 電流 - 電源:150mA 測(cè)試頻率:- 封裝/外殼:16-VFQFN 裸露焊盤 供應(yīng)商器件封裝:16-QFN（3x3） 標(biāo)準(zhǔn)包裝:1 |
| HMC457QS16G | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz |
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