參數(shù)資料
型號: HMC451
廠商: 美國訊泰微波有限公司上海代表處
英文描述: GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5.0 - 20.0 GHz
中文描述: GaAs PHEMT MMIC中功率放大器,5.0 - 20.0千兆赫
文件頁數(shù): 5/8頁
文件大小: 379K
代理商: HMC451
A
1
1 - 82
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
1
RF IN
This pad is AC coupled and matched to 50 Ohms from
5 - 20 GHz.
2, 3
Vdd1, Vdd2
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
4
RF OUT
This pad is AC coupled and matched to 50 Ohms from
5 - 20 GHz.
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
Die Packaging Information
[1]
Standard
Alternate
GP-2
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
HMC451
v00.0305
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5.0 - 20.0 GHz
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