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參數(shù)資料
| 型號(hào)： | HMC450QS16GE |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs InGaP HBT MMIC POWER AMPLIFIER, 0.8 - 1.0 GHz |
| 中文描述： | 砷化鎵的InGaP HBT MMIC功率放大器，0.8 - 1.0吉赫 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 393K |
| 代理商： | HMC450QS16GE |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+5.5 Vdc
Control Voltage (Vpd1, Vpd2)
+5.0 Vdc
RF Input Power (RFin)(Vs = +5.0
Vdc, VPD = +4.0 Vdc)
+10 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 28 mW/°C above 85 °C)
1.86 W
Thermal Resistance
(junction to ground paddle)
35 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Vs (V)
Icq (mA)
4.75
300
5.0
310
5.25
325
Typical Supply Current
vs. Supply Voltage
Note: Amplifier will operate over full voltage range shown above
HMC450QS16G
/
450QS16GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 0.8 - 1.0 GHz
v02.0406
Part Number
Package Body Material
Lead Finish
MSL Rating
Package Marking
[3]
HMC450QS16G
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
[1]
H450
XXXX
HMC450QS16GE
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[2]
H450
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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| HMC450QS16GETR | 功能描述:RF Amplifier IC General Purpose 800MHz ~ 1GHz 16-SMD 制造商:analog devices inc. 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 頻率:800MHz ~ 1GHz P1dB:26.5dBm 增益:26dB 噪聲系數(shù):8dB RF 類型:通用 電壓 - 電源:5V 電流 - 電源:310mA 測試頻率:900MHz 封裝/外殼:16-SSOP（0.154"，3.90mm 寬）裸焊盤 供應(yīng)商器件封裝:16-SMD 標(biāo)準(zhǔn)包裝:1 |
| HMC451 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz |
| HMC451_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz |
| HMC451LC3 | 功能描述:IC MMIC PWR AMP 3X3QFN RoHS:是 類別:RF/IF 和 RFID >> RF 放大器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數(shù)據(jù):1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR) |
| HMC451LC3_08 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz |
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