參數(shù)資料
型號(hào): HMC442
廠商: 美國(guó)訊泰微波有限公司上海代表處
元件分類: FPGA
英文描述: 800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
中文描述: GaAs PHEMT MMIC中功率放大器,17.5 - 25.5吉赫
文件頁數(shù): 1/8頁
文件大?。?/td> 233K
代理商: HMC442
MICROWAVE CORPORATION
1 - 68
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
1
HMC442
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 17.5 - 25.5 GHz
v01.0304
General Description
Features
Functional Diagram
The HMC442 is an efficient GaAs PHEMT MMIC
Medium Power Amplifier which operates between
17.5 and 25.5 GHz. The HMC442 provides 15 dB
of gain, +23 dBm of saturated power and 25%
PAE from a +5.0 V supply voltage. The amplifier
chip can easily be integrated into Multi-Chip-
Modules (MCMs) due to its small (0.96mm
2
) size.
All data is tested with the chip in a 50 Ohm test
fixture connected via 0.025mm (1 mil) diameter
wire bonds of minimal length 0.31mm (12 mils).
Saturated Power: +23 dBm @ 25% PAE
Gain: 15 dB
Supply Voltage: +5.0 V
50 Ohm Matched Input/Output
Electrical Specifications,
T
A
= +25° C, Vdd = 5V, Idd = 85 mA*
Typical Applications
The HMC442 is ideal for use as a medium power
amplifier for:
Point-to-Point Radios
Point-to-Multi-Point Radios
VSAT
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
17.5 - 21.0
21.0 - 24.0
24.0 - 25.5
GHz
Gain
12
14.5
12
15
13.5
16
dB
Gain Variation Over Temperature
0.02
0.03
0.02
0.03
0.02
0.03
dB/ °C
Input Return Loss
15
13
10
dB
Output Return Loss
10
10
10
dB
Output Power for 1 dB Compression (P1dB)
18
21
18.5
21.5
19
22
dBm
Saturated Output Power (Psat)
20
23
20
23
20
23.5
dBm
Output Third Order Intercept (IP3)
29
28
27
dBm
Noise Figure
6.5
5.5
6
dB
Supply Current (Idd)(Vdd = 5V, Vgg = -1V Typ.)
85
85
85
mA
* Adjust Vgg between -1.5 to -0.5V to achieve Idd = 85 mA typical.
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