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參數(shù)資料
| 型號： | HMC414MS8G |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 2200 MHz - 2800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | PLASTIC, SMT, 8 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 240K |
| 代理商： | HMC414MS8G |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC414MS8G / 414MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
v04.0607
General Description
Features
Functional Diagram
The HMC414MS8G & HMC414MS8GE are high effi-
ciency GaAs InGaP Heterojunction Bipolar Tran-
sistor (HBT) MMIC Power amplifiers which operate
between 2.2 and 2.8 GHz. The amplifier is packaged
in a low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal per-
formance. With a minimum of external components,
the amplifier provides 20 dB of gain, +30 dBm of satu-
rated power at 32% PAE from a +5V supply voltage.
The amplifier can also operate with a 3.6V supply. Vpd
can be used for full power down or RF output power/
current control.
Gain: 20 dB
Saturated Power: +30 dBm
32% PAE
Supply Voltage: +2.75V to +5V
Power Down Capability
Low External Part Count
Electrical Specifications, T
A = +25° C, As a
Function of Vs, Vpd = 3.6V
Typical Applications
This amplifier is ideal for use as a power
amplifier for 2.2 - 2.7 GHz applications:
BLUETOOTH
MMDS
Parameter
Vs = 3.6V
Vs = 5V
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
2.2 - 2.8
GHz
Gain
17
20
25
17
20
25
dB
Gain Variation Over Temperature
0.03
0.04
0.03
0.04
dB/ °C
Input Return Loss
8
dB
Output Return Loss
9
dB
Output Power for 1 dB Compression (P1dB)
21
25
23
27
dBm
Saturated Output Power (Psat)
27
30
dBm
Output Third Order Intercept (IP3)
30
35
39
dBm
Noise Figure
6.5
7.0
dB
Supply Current (Icq)
Vpd = 0V / 3.6V
0.002 / 240
0.002 / 300
mA
Control Current (Ipd)
Vpd = 3.6V
7
mA
Switching Speed
tON, tOFF
45
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMC414MS8GE | 2200 MHz - 2800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| HMC415LP3 | 4900 MHz - 5900 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC415LP3E | 4900 MHz - 5900 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC424LP3TR | 0 MHz - 13000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 4.6 dB INSERTION LOSS-MAX |
| HMC424LP3ETR | 0 MHz - 13000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 4.6 dB INSERTION LOSS-MAX |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC414MS8G_01 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz |
| HMC414MS8G_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz |
| HMC414MS8GE | 制造商:Hittite Microwave Corp 功能描述:IC PWR AMP 2.1-3.2GHZ 8-MSOP |
| HMC414MS8GETR | 制造商:Hittite Microwave Corp 功能描述:HMC414 Series 2.2 - 2.8 GHz HBT MMIC Power Amplifier - MSOP-8EP |
| HMC415LP3 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz |
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