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參數(shù)資料
| 型號： | HMC413QS16G |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | Patch Cord; Cable Length:4ft; Approval Categories:Exceeds Category 6 Standards; Color:White; Features:4-Pair 23 AWG UTP modular cord, very small footprint, exceeds Category 6 standards RoHS Compliant: Yes |
| 中文描述： | 砷化鎵的InGaP HBT MMIC功率放大器，1月6號至二月二日吉赫 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 318K |
| 代理商： | HMC413QS16G |
MICROWAVE CORPORATION
8 - 166
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
8
HMC413QS16G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
v03.1203
General Description
The HMC413QS16G is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC Power amplifier which operates between
1.6 and 2.2 GHz. The amplifier is packaged in a
low cost, surface mount 16 leaded package with
an exposed base for improved RF and thermal
performance. With a minimum of external compo-
nents, the amplifier provides 23 dB of gain, +29.5
dBm of saturated power at 42% PAE from a +5.0V
supply voltage. The amplifier can also operate
with a 3.6V supply. Vpd can be used for full power
down or RF output power/current control.
Features
Gain: 23 dB
Saturated Power: +29.5 dBm
42% PAE
Supply Voltage: +2.75V to +5.0 V
Power Down Capability
Low External Part Count
Functional Diagram
Electrical Specifications,
T
A
= +25° C, As a Function of Vs, Vpd = 3.6V
Typical Applications
This amplifier is ideal for use as a power/driver
amplifier for 1.6 - 2.2 GHz applications:
Cellular / PCS / 3G
Portable & Infrastructure
Wireless Local Loop
Parameter
Frequency
Vs= 3.6V
Vs= 5.0V
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
Gain
1.6 - 1.7 GHz
1.7 - 2.0 GHz
2.0 - 2.1 GHz
2.1 - 2.2 GHz
18
19
18
17
21
22
21
20
19
20
19
18
22
23
22
21
dB
dB
dB
dB
Gain Variation Over Temperature
1.6 - 2.2 GHz
0.025
0.035
0.025
0.035
dB/°C
Input Return Loss
1.6 - 2.2 GHz
10
10
dB
Output Return Loss
1.6 - 2.2 GHz
8
9
dB
Output Power for 1 dB Compression (P1dB)
1.6 - 1.7 GHz
1.7 - 2.2 GHz
20
21
23
24
23
24
26
27
dBm
dBm
Saturated Output Power (Psat)
1.6 - 1.7 GHz
1.7 - 2.2 GHz
25.5
26.5
28.5
29.5
dBm
dBm
Output Third Order Intercept (IP3)
1.6 - 1.7 GHz
1.7 - 2.0 GHz
2.0 - 2.2 GHz
32
33
32
35
36
35
36
37
36
39
40
39
dBm
dBm
dBm
Noise Figure
1.6 - 2.2 GHz
5.5
5.5
dB
Supply Current (Icq) Vpd= 0V/3.6V
0.002/220
0.002/270
mA
Control Current (Ipd) Vpd= 3.6V
7
7
mA
Switching Speed
tON, tOFF
80
80
ns
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HMC413QS16G_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz |
| HMC413QS16GE | 制造商:Hittite Microwave Corp 功能描述:IC PWR AMP 1.6-2.2GHZ 16-QSOP |
| HMC414MS8G | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz |
| HMC414MS8G_01 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz |
| HMC414MS8G_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz |
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