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參數(shù)資料
| 型號(hào)： | HMC409LP4 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 3300 MHz - 3800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | LEADLESS, PLASTIC, SMT, 24 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 700K |
| 代理商： | HMC409LP4 |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC409LP4 / 409LP4E
GaAs InGaP HBT 1 WATT
POWER AMPLIFIER, 3.3 - 3.8 GHz
v03.0710
General Description
Features
Functional Diagram
The HmC409lp4 & HmC409lp4e are high efficiency
GaAs inGap HBT mmiC power amplifiers operating
from 3.3 to 3.8 GHz. The amplifier is packaged in a
low cost, leadless smT package. Utilizing a minimum
of external components the amplifier provides 31 dB
of gain and +32.5 dBm of saturated power from a
+5V supply voltage. The power control (Vpd) can be
used for full power down or rf output power/current
control. for +22 dBm ofDm output power (64 QAm,
54 mbps), the HmC409lp4 & HmC409lp4e achieve
an error vector magnitude (eVm) of 2%, meeting
wimAX 802.16 linearity requirements.
Gain: 31 dB
40% pAe @ +32.5 dBm pout
2% eVm @ pout = +22 dBm
with 54mbps ofDm signal
+46 dBm output ip3
integrated power Control (Vpd)
single +5V supply
Electrical Specifications, T
A = +25° C, Vs = +5V, Vpd = +5V, Vbias=+5V
Typical Applications
This amplifier is ideal for use as a power
amplifier for 3.3 - 3.8 GHz applications:
wimAX 802.16
fixed wireless Access
wireless local loop
parameter
min.
Typ.
max.
min.
Typ.
max.
min.
Typ.
max.
Units
frequency range
3.3 - 3.4
3.4 - 3.6
3.6 - 3.8
GHz
Gain
30
32
29
31.5
28
30
dB
Gain Variation over Temperature
0.04
0.05
0.04
0.05
0.035
0.045
dB/ °C
input return loss
10
15
dB
output return loss
13
14
10
dB
output power for 1dB Compression (p1dB)
28
30
28
30.5
28
30.5
dBm
saturated output power (psat)
32
32.5
32
dBm
output Third order intercept (ip3) [2]
41
45
42
45.5
41
45
dBm
error Vector magnitude @ 3.5 GHz
(54 mbps ofDm signal @ +22 dBm pout)
2
%
noise figure
5.8
6
dB
supply Current (icq)
Vs= Vcc1 + Vcc2= +5V
615
mA
Control Current (ipd)
Vpd = +5V
4
mA
switching speed
ton, toff
20
ns
Bias Current (ibias)
10
mA
note 1: specifications and data reflect HmC409lp4 measured using the application circuit found herein. Contact the HmC Applications Group for
assistance in optimizing performance for your application.
note 2: Two-tone output power of +15 dBm per tone, 1 mHz spacing.
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相關(guān)代理商/技術(shù)參數(shù) |
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| HMC409LP4_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz |
| HMC409LP4E | 制造商:Hittite Microwave Corp 功能描述:IC PWR AMP HBT 1W 24-QFN |
| HMC409LP4ETR | 制造商:Hittite Microwave Corp 功能描述:HP409 Series 3.3 - 3.8 GHz GaAs InGaP HBT 1 Watt Power Amplifier - QFN-24 |
| HMC40DRAH | 功能描述:CONN EDGECARD 80POS R/A .100 SLD RoHS:是 類別:連接器，互連式 >> Card Edge 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 卡類型:非指定 - 雙邊 類型:母頭 Number of Positions/Bay/Row:40 位置數(shù):80 卡厚度:0.031"（0.79mm） 行數(shù):2 間距:0.100"（2.54mm） 特點(diǎn):- 安裝類型:通孔，直角 端子:焊接 觸點(diǎn)材料:銅鈹 觸點(diǎn)表面涂層:金 觸點(diǎn)涂層厚度:30µin（0.76µm） 觸點(diǎn)類型：:全波紋管 顏色:藍(lán) 包裝:管件 法蘭特點(diǎn):頂部安裝開口，無螺紋，0.125"（3.18mm）直徑 材料 - 絕緣體:聚對(duì)苯二甲酸丁二酯（PBT） 工作溫度:-65°C ~ 125°C 讀數(shù):雙 |
| HMC40DRAH-S734 | 功能描述:CONN EDGECARD 80POS .100 R/A PCB RoHS:是 類別:連接器，互連式 >> Card Edge 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 卡類型:非指定 - 雙邊 類型:母頭 Number of Positions/Bay/Row:40 位置數(shù):80 卡厚度:0.031"（0.79mm） 行數(shù):2 間距:0.100"（2.54mm） 特點(diǎn):- 安裝類型:通孔，直角 端子:焊接 觸點(diǎn)材料:銅鈹 觸點(diǎn)表面涂層:金 觸點(diǎn)涂層厚度:30µin（0.76µm） 觸點(diǎn)類型：:全波紋管 顏色:藍(lán) 包裝:管件 法蘭特點(diǎn):頂部安裝開口，無螺紋，0.125"（3.18mm）直徑 材料 - 絕緣體:聚對(duì)苯二甲酸丁二酯（PBT） 工作溫度:-65°C ~ 125°C 讀數(shù):雙 |
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