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參數(shù)資料
| 型號： | HMC407MS8G |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz |
| 中文描述： | 砷化鎵的InGaP HBT MMIC功率放大器，5.0 - 7.0吉赫 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 279K |
| 代理商： | HMC407MS8G |
MICROWAVE CORPORATION
8 - 150
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
8
HMC407MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 7.0 GHz
v01.1202
General Description
Features
Functional Diagram
The HMC407MS8G is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC Power amplifier which operates between
5 and 7 GHz. The amplifier requires no external
matching to achieve operation and is thus truly 50
Ohm matched at input and output. The amplifier
is packaged in a low cost, surface mount 8 leaded
package with an exposed base for improved RF
and thermal performance. The amplifier provides
15 dB of gain, +29 dBm of saturated power at
28% PAE from a +5.0V supply voltage. Power
down capability is available to conserve current
consumption when the amplifier is not in use.
Gain: 15 dB
Saturated Power: +29 dBm
28% PAE
Supply Voltage: +5.0 V
Power Down Capability
No External Matching Required
Electrical Specifications,
T
A
= +25° C, Vs = 5V, Vpd = 5V
Typical Applications
This amplifier is ideal for use as a power
amplifier for 5.0 - 7.0 GHz applications:
UNII
HiperLAN
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
5.0 - 7.0
5.6 - 6.0
GHz
Gain
10
15
18
12
15
18
dB
Gain Variation Over Temperature
0.025
0.035
0.025
0.035
dB/ °C
Input Return Loss
12
12
dB
Output Return Loss
15
15
dB
Output Power for 1 dB Compression (P1dB)
21
25
22
25
dBm
Saturated Output Power (Psat)
29
29
dBm
Output Third Order Intercept (IP3)
32
37
36
40
dBm
Noise Figure
5.5
5.5
dB
Supply Current (Icq)
Vpd = 0V/5V
0.002 / 230
0.002 / 230
mA
Control Current (Ipd)
Vpd = 5V
7
7
mA
Switching Speed
tON, tOFF
30
30
ns
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HMC407MS8G_07 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz |
| HMC407MS8G_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz |
| HMC407MS8GE | 功能描述:POWER AMP 5-6GHZ INGAP 8MSOP RoHS:是 類別:RF/IF 和 RFID >> RF 放大器 系列:- 標準包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數(shù)據(jù):1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR) |
| HMC407MS8GETR | 制造商:Hittite Microwave Corp 功能描述:POWER AMP 5-6GHZ INGAP 8MSOP 制造商:Hittite Microwave Corp 功能描述:HMC407 Series 5.0 - 7.0 GHz GaAs InGaP HBT MMIC Power Amplifier - MSOP-8EP |
| HMC408LP3 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz |
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