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參數(shù)資料
| 型號： | HMC382LP3E |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 1700 MHz - 2200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-16 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 208K |
| 代理商： | HMC382LP3E |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC382LP3 / 382LP3E
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
v01.0610
General Description
Features
Functional Diagram
The HMC382LP3 & HMC382LP3E high dynamic
range GaAs PHEMT MMIC Low Noise Amplifiers are
ideal for GSM & CDMA cellular basestation front-end
receivers operating between 1.7 and 2.2 GHz. This LNA
has been optimized to provide 1.0 dB noise figure, 17
dB gain and +30 dBm output IP3 from a single supply
of +5V. The HMC382LP3 & HMC382LP3E feature an
externally adjustable supply current which allows the
designer to tailor the linearity performance of the LNA
for each application. For applications which require
improved noise figure, please see the HMC618LP3(E).
Noise Figure: 1 dB
Output IP3: +30 dBm
Gain: 17 dB
Externally Adjustable Supply Current
Single Positive Supply: +5V
50 Ohm Matched Input/Output
Electrical Specifications, T
A = +25° C, Vdd1, Vdd2 = +5V, Rbias = 16 Ohms*
Typical Applications
The HMC382LP3 / HMC382LP3E is ideal for:
Cellular/3G Infrastructure
Base Stations & Repeaters
CDMA, W-CDMA, & TD-SCDMA
GSM/GPRS & EDGE
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
1.7 - 1.9
1.9 - 2.0
2.0 - 2.1
2.1 - 2.2
GHz
Gain
14
17
12
15
11
14
9
12
dB
Gain Variation Over Temperature
0.01
0.015
0.01
0.015
0.01
0.015
0.01
0.015
dB/°C
Noise Figure
1.0
1.3
1.05
1.35
1.15
1.45
1.2
1.5
dB
Input Return Loss
13
12
11
10
dB
Output Return Loss
10
13
12
9
dB
Reverse Isolation
37
36
35
dB
Output Power for
1dB Compression (P1dB)
16
15.5
14
dBm
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone,
1 MHz tone spacing)
29.5
30
29.5
dBm
Supply Current (Idd1 + Idd2)
67
mA
* Rbias resistor value sets current. See application circuit herein.
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC382LP3ETR | 功能描述:RF Amplifier IC General Purpose 1.7GHz ~ 2.2GHz 16-QFN (3x3) 制造商:analog devices inc. 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 頻率:1.7GHz ~ 2.2GHz P1dB:16dBm 增益:17dB 噪聲系數(shù):1dB RF 類型:通用 電壓 - 電源:5V 電流 - 電源:67mA 測試頻率:1.8GHz 封裝/外殼:16-VFQFN 裸露焊盤 供應商器件封裝:16-QFN（3x3） 標準包裝:1 |
| HMC383 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz |
| HMC383_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz |
| HMC383LC4 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz |
| HMC383LC4_08 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz |
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