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參數(shù)資料
| 型號： | HMC382LP3E |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz |
| 中文描述： | GaAs PHEMT MMIC低噪聲放大器，一月七日至二月二日吉赫 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 298K |
| 代理商： | HMC382LP3E |
A
5
5 - 130
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC382LP3
/
382LP3E
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
v00.1005
General Description
Features
Functional Diagram
The HMC382LP3 & HMC382LP3E high dynamic
range GaAs PHEMT MMIC Low Noise Amplifiers are
ideal for GSM & CDMA cellular basestation front-end
receivers operating between 1.7 and 2.2 GHz. This
LNA has been optimized to provide 1.0 dB noise figure,
17 dB gain and +30 dBm output IP3 from a single
supply of +5.0V. Input and output return losses are
13 dB typical and the LNA requires no external mat-
ching components. The HMC382LP3 & HMC382LP3E
share the same package and pinout with the
HMC376LP3 0.7 - 1.0 GHz LNA. The HMC382LP3 &
HMC382LP3E feature an externally adjustable supply
current which allows the designer to tailor the linearity
performance of the LNA for each application.
Noise Figure: 1.0 dB
Output IP3: +30 dBm
Gain: 17 dB
Externally Adjustable Supply Current
Single Positive Supply: +5.0V
50 Ohm Matched Input/Output
Electrical Specifications,
T
A
= +25° C, Vdd1, Vdd2 = +5V, Rbias = 16 Ohms*
Typical Applications
The HMC382LP3 / HMC382LP3E is ideal for:
Cellular/3G Infrastructure
Base Stations & Repeaters
CDMA, W-CDMA, & TD-SCDMA
GSM/GPRS & EDGE
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
1.7 - 1.9
1.9 - 2.0
2.0 - 2.1
2.1 - 2.2
GHz
Gain
14
17
12
15
11
14
9
12
dB
Gain Variation Over Temperature
0.01
0.015
0.01
0.015
0.01
0.015
0.01
0.015
dB/°C
Noise Figure
1.0
1.3
1.05
1.35
1.15
1.45
1.2
1.5
dB
Input Return Loss
13
12
11
10
dB
Output Return Loss
10
13
12
9
dB
Reverse Isolation
37
36
35
35
dB
Output Power for
1dB Compression (P1dB)
16
16
15.5
14
dBm
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone,
1 MHz tone spacing)
29.5
30
30
29.5
dBm
Supply Current (Idd1 + Idd2)
67
67
67
67
mA
* Rbias resistor value sets current. See application circuit herein.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC382LP3ETR | 功能描述:RF Amplifier IC General Purpose 1.7GHz ~ 2.2GHz 16-QFN (3x3) 制造商:analog devices inc. 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 頻率:1.7GHz ~ 2.2GHz P1dB:16dBm 增益:17dB 噪聲系數(shù):1dB RF 類型:通用 電壓 - 電源:5V 電流 - 電源:67mA 測試頻率:1.8GHz 封裝/外殼:16-VFQFN 裸露焊盤 供應(yīng)商器件封裝:16-QFN（3x3） 標(biāo)準(zhǔn)包裝:1 |
| HMC383 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz |
| HMC383_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz |
| HMC383LC4 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz |
| HMC383LC4_08 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz |
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