參數資料
型號： HMC373LP3E
廠商： HITTITE MICROWAVE CORP
元件分類： 放大器
英文描述： 700 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝： 3 X 3 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, QFN-16
文件頁數： 1/8頁
文件大?。?/td> 274K
代理商： HMC373LP3E
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC373LP3 / 373LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz
v03.0610
General Description
Features
Functional Diagram
The HMC373LP3 / HMC373LP3E are versatile, high
dynamic range GaAs MMIC Low Noise Amplifiers
that integrates a low loss LNA bypass mode on the
IC. The amplifier is ideal for GSM & CDMA cellular
basestation front-end receivers operating between
700 and 1000 MHz and provides 0.9 dB noise figure,
14 dB of gain and +35 dBm IP3 from a single supply of
+5V @ 90 mA. Input and output return losses are 28
and 12 dB respectively with the LNA requiring minimal
external components to optimize the RF input match,
RF ground and DC bias. By presenting an open or
short circuit to a single control line, the LNA can be
switched into a low 2.0 dB loss bypass mode reducing
the current consumption to 10 μA. For applications
which require improved noise figure, please see the
HMC668LP3(E).
Noise Figure: 0.9 dB
Output IP3: +35 dBm
Gain: 14 dB
Low Loss LNA Bypass Path
Single Supply: +5V @ 90 mA
50 Ohm Matched Output
Electrical Specifications, T
A = +25° C, Vdd = +5V
Typical Applications
The HMC373LP3 / HMC373LP3E is ideal for
basestation receivers:
GSM, GPRS & EDGE
CDMA & W-CDMA
Private Land Mobile Radio
Parameter
LNA Mode
Bypass Mode
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Frequency Range
810 - 960
700 - 1000
MHz
Gain
11.5
13.5
10.5
14
-2.8
-2.0
dB
Gain Variation Over Temperature
0.008
0.015
0.008
0.015
0.002
0.004
dB / °C
Noise Figure
0.9
1.3
1.0
1.4
dB
Input Return Loss
28
25
30
dB
Output Return Loss
12
11
25
dB
Reverse Isolation
20
19
dB
Power for 1dB Compression (P1dB)*
18
21
17
20
30
dBm
Saturated Output Power (Psat)
22.5
22
dBm
Third Order Intercept (IP3)*
(-20 dBm Input Power per tone, 1 MHz tone spacing)
35.5
35
50
dBm
Supply Current (Idd)
90
0.01
mA
* P1dB and IP3 for LNA Mode are referenced to RFOUT while P1dB and IP3 for Bypass Mode are referenced to RFIN.
相關PDF資料
PDF描述
HMC375LP3 1700 MHz - 2200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
HMC375LP3E 1700 MHz - 2200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
HMC376LP3E 700 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
HMC376LP3 700 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
HMC386LP4 2600 MHz - 2800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
相關代理商/技術參數
參數描述
HMC373LP3ETR 制造商:Hittite Microwave Corp 功能描述:HMC373 Series 0.7 - 1 GHz GaAs PHEMT MMIC Low Noise Amplifier - 3x3 mm QFN-16
HMC374 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SMT PHEMT LOW NOISE AMPLIFIER, 0.3 - 3.0 GHz
HMC374_09 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SMT PHEMT LOW NOISE AMPLIFIER, 0.3 - 3.0 GHz
HMC374E 功能描述:IC AMP LNA 0.3-3.0GHZ SOT26 RoHS:是 類別:RF/IF 和 RFID >> RF 放大器 系列:- 標準包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數據:1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR)
HMC374ETR 制造商:Hittite Microwave Corp 功能描述:IC AMP LNA 0.3-3.0GHZ SOT26 制造商:Hittite Microwave Corp 功能描述:HMC374 Series 0.3 - 3.0 GHz SMT PHEMT Low Noise Amplifier - SOT-26-6
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