參數(shù)資料
型號(hào): HMC322LP4
廠商: 美國(guó)訊泰微波有限公司上海代表處
英文描述: GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 8.0 GHz
中文描述: 砷化鎵微波單片集成電路SP8T非反射開關(guān),直流- 8.0吉赫
文件頁(yè)數(shù): 1/6頁(yè)
文件大小: 177K
代理商: HMC322LP4
MICROWAVE CORPORATION
7 - 14
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
S
7
HMC322
GaAs MMIC SP8T NON-REFLECTIVE
SWITCH, DC - 10.0 GHz
v00.0303
General Description
Features
Broadband Performance: DC - 10.0 GHz
Functional Diagram
The HMC322 is a broadband non-reflective
GaAs MESFET SP8T switch chip. Covering DC
to 10.0 GHz, this switch offers high isolation and
low insertion loss and extends the frequency
coverage of Hittite’s SP8T switch product line.
This switch also includes an on board binary
decoder circuit which reduces the required logic
control lines to three. The switch operates using
a negative control voltage of 0/-5V, and requires
a fixed bias of -5V. All data is tested with the chip
in a 50 Ohm test fixture connected via 0.025 mm
(1 mil) diameter wire bonds of 0.5 mm (20 mils)
length.
High Isolation: >38 dB@ 4 GHz
Low Insertion Loss: 2.0 dB@ 4 GHz
Integrated 3:8 TTL Decoder
Small Size: 1.45 mm x 1.6 mm x 0.10 mm
Electrical Specifications,
T
A
= +25° C, With 0/-5V Control, Vee= -5V, 50 Ohm System
Typical Applications
The HMC322 is ideal for:
Telecom Infrastructure
Microwave Radio & VSAT
Military & Space
Test Instrumentation
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
DC - 10.0 GHz
1.9
2.0
2.1
2.2
2.4
2.3
2.4
2.5
2.6
2.8
dB
dB
dB
dB
dB
Isolation (RFC to RF1 - 8)
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
DC - 10.0 GHz
40
32
27
20
18
46
38
32
26
24
dB
dB
dB
dB
dB
Return Loss
“On State”
DC - 10.0 GHz
14
dB
Return Loss
“Off State”
DC - 10.0 GHz
11
dB
Input Power for 1 dB Compression
0.5 - 10.0 GHz
19
23
dBm
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone)
0.5 - 10.0 GHz
34
38
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 10.0 GHz
50
150
ns
ns
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