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參數(shù)資料
| 型號： | HMC136 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs MMIC BI-PHASE MODULATOR, 4 - 8 GHz |
| 中文描述： | 砷化鎵微波單片集成電路雙相位調(diào)制器，4 - 8千兆赫 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 115K |
| 代理商： | HMC136 |
MICROWAVE CORPORATION
6 - 6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
M
6
HMC136
GaAs MMIC BI-PHASE
MODULATOR, 4 - 8 GHz
v01.0300
General Description
Features
Functional Diagram
Chip Integrates Directly into MIC Designs
30 dB of Carrier Suppression
Direct Modulation in the 4 - 8 GHz Band
Functions also as a Phase Detector
Electrical Specifications,
T
A
= +25° C, 5 mA Bias Current
Typical Applications
The HMC136 is suitable for:
Wireless Local Loop
LMDS & VSAT
Pt. to Pt. Radios
Test Equipment
The HMC136 Bi-Phase Modulator is designed to
phase-modulate an RF signal into reference and 180
degree states. Device input is at the RF port and output
is at the LO port. The polarity of the bias current at the
control port (IF port) defines the phase states. Excellent
amplitude and phase balance provided by closely
matched monolithic balun and diode circuits delivers
30 dB of carrier suppression in a tiny monolithic chip.
The device also functions as a demodulator or
phase comparator. As a demodulator, data emerges
at the control port when a modulated signal at the
RF port is compared to a reference signal at the
LO port. As a phase comparator, the phase angle
between two signals applied to the RF and LO ports
is represented by an analog voltage at the control port.
Except for carrier suppression, the data presented
here was measured under static conditions in which
a DC bias current (nominally 5 mA) is applied to the
control port.
Parameter
Min.
Typ.
Max.
Units
Frequency Band
4 - 8
GHz
Insertion Loss
8
10
dB
Return Loss, RF and LO Ports
2.5
3.0
dB
Amplitude Balance
0.1
0.5
dB
Phase Balance
4.0
6.0
deg
Carrier Supression (When driven with a 1 MHz square wave, 1.4 Vp-p)
25
30
dBc
Input Power for 1 dB Compression
4
8
dBm
Third Order Intercept, Input
10
15
dBm
Second Order Intercept, Input
25
35
dBm
Bias Current (Bias current forward biases internal Schottky diodes providing approximately 0.6 V
at the control port).
2
5
10
mA
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相關(guān)代理商/技術(shù)參數(shù) |
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| HMC136_07 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC BI-PHASE MODULATOR, 4 - 8 GHz |
| HMC136_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC BI-PHASE MODULATOR, 4 - 8 GHz |
| HMC137 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC BI-PHASE MODULATOR, 6 - 11 GHz |
| HMC137_07 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC BI-PHASE MODULATOR, 6 - 11 GHz |
| HMC137_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC BI-PHASE MODULATOR, 6 - 11 GHz |
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