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參數(shù)資料
| 型號： | HMC-AUH320 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 71000 MHz - 86000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 2.20 X 0.87 MM, 0.10 MM HEIGHT, DIE-5 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 201K |
| 代理商： | HMC-AUH320 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 86 GHz
v03.0209
General Description
Features
Functional Diagram
Gain: 16 dB @ 74 GHz
P1dB: +15 dBm
Supply Voltage: +4V
50 Ohm Matched Input/Output
Die Size: 2.20 x 0.87 x 0.1 mm
Typical Applications
This HMC-AUH320 is ideal for:
Short Haul / High Capacity Links
Wireless LAN Bridges
Automotive Radar
Military & Space
E-Band Communication Systems
The HMC-AUH320 is a high dynamic range, four stage
GaAs HEMT MMIC Medium Power Amplifier which
operates between 71 and 86 GHz. The HMC-AUH320
provides 16 dB of gain at 74 GHz, and an output
power of +15 dBm at 1 dB compression from a +4V
supply voltage. All bond pads and the die backside
are Ti/Au metallized and the amplifier device is fully
passivated for reliable operation. The HMC-AUH320
GaAs HEMT MMIC Medium Power Amplifier is
compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wire bonding, making it ideal for MCM and hybrid
microcircuit applications.
All data shown herein is
measured with the chip in a 50 Ohm environment and
contacted with RF probes.
HMC-AUH320
Electrical Specifications
, T
A = +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 130 mA
[2]
Parameter
Min.
Typ.
Max.
Units
Frequency Range
71 - 86
GHz
Gain
10
16
dB
Input Return Loss
4dB
Output Return Loss
6dB
Output power for 1dB Compression (P1dB)
15
dBm
Saturated Output Power (Psat)
16
dBm
Supply Current (Idd1+Idd2)
130
mA
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -0.8V to +0.3V (typ -0.1V) to achieve Idd
1 = 40 mA, Idd2 = 90 mA
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