參數(shù)資料
型號(hào): HMC-ALH444
廠商: HITTITE MICROWAVE CORP
元件分類: 放大器
英文描述: 1000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: 2.64 X 1.64 MM, 0.10 MM HEIGHT, DIE-5
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 191K
代理商: HMC-ALH444
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 1 - 12 GHz
v03.0410
General Description
Features
Functional Diagram
Noise Figure: 1.75 dB @ 10 GHz
Gain: 17 dB
P1dB Output Power: +19 dBm @ 5 GHz
Supply Voltage: +5V @ 55 mA
Die Size: 2.64 x 1.64 x 0.1 mm
Electrical Specifications*
, T
A = +25° C, Vdd= +5V
Typical Applications
This HMC-ALH444 is ideal for:
Wideband Communication Systems
Surveillance Systems
Point-to-Point Radios
Point-to-Multi-Point Radios
Military & Space
Test Instrumentation
* VSAT
The HMC-ALH444 is a GaAs MMIC HEMT Low Noise
Wideband Amplifier die which operates between 1
and 12 GHz. The amplifier provides 17 dB of gain, 1.5
dB noise figure and +19 dBm of output power at 1 dB
gain compression while requiring only 55 mA from a
+5V supply voltage.
HMC-ALH444
Parameter
Min.
Typ.
Max.
Units
Frequency Range
1 - 12
GHz
Gain
15
17
dB
Gain Variation over Temperature
0.02
dB / °C
Noise Figure
1.5
2
dB
Input Return Loss
10
dB
Output Return Loss
14
dB
Output IP3
28
dBm
Output Power for 1 dB Compression
19
dBm
Supply Current (Idd)
(Vdd = 5V, Vgg1 = -0.5V Typ., Vgg2 = 1.5V Typ)
55
mA
*Unless otherwise indicated, all measurements are from probed die
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