參數(shù)資料
型號(hào): HM62W8511HJP-15
廠(chǎng)商: Hitachi,Ltd.
英文描述: 4M High Speed SRAM (512-kword x 8-bit)
中文描述: 4分高速SRAM(512 - KWord的× 8位)
文件頁(yè)數(shù): 11/13頁(yè)
文件大?。?/td> 74K
代理商: HM62W8511HJP-15
HM62W8511H Series
11
Low V
CC
Data Retention Characteristics
(Ta = 0 to +70
°
C)
This characteristics is guaranteed only for L-version.
Parameter
Symbol
Min
Typ*
1
Max
Unit
Test conditions
V
CS
V
CC
– 0.2 V
(1) 0 V
Vin
0.2 V or
(2) V
CC
Vin
V
CC
– 0.2 V
V
= 3 V, V
CC
CS
V
CC
– 0.2 V
(1) 0 V
Vin
0.2 V or
(2) V
CC
Vin
V
CC
– 0.2 V
See retention waveform
V
CC
for data retention
V
DR
2.0
V
Data retention current
I
CCDR
40
600
μ
A
Chip deselect to data
retention time
t
CDR
0
ns
Operation recovery time
Note: 1. Typical values are at V
CC
= 3.0 V, Ta = +25C, and not guaranteed.
t
R
5
ms
Low V
CC
Data Retention Timing Waveform
V
CC
3.0 V
2.2 V
0 V
CS
t
CDR
t
R
V
CC
CS
V
CC
– 0.2 V
V
DR
Data retention mode
相關(guān)PDF資料
PDF描述
HM62W8511HLJP-12 4M High Speed SRAM (512-kword x 8-bit)
HM62W8511HLJP-15 4M High Speed SRAM (512-kword x 8-bit)
HM62W8511HJPI-15 4M High Speed SRAM (512-kword x 8-bit)
HM62W8511HC 4M High Speed SRAM (512-kword x 8-bit)
HM62W8511HCJP-10 4M High Speed SRAM (512-kword x 8-bit)
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