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參數(shù)資料
| 型號： | HM62W4100HCJP-10 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4M High Speed SRAM (1-Mword x 4-bit) |
| 中文描述： | 4分高速SRAM（1 - Mword × 4位） |
| 文件頁數(shù)： | 12/14頁 |
| 文件大小： | 65K |
| 代理商： | HM62W4100HCJP-10 |
HM62W4100HC Series
12
Low V
CC
Data Retention Characteristics
(Ta = 0 to +70
°
C)
This characteristics is guaranteed only for L-version.
Parameter
Symbol
Min
Typ*
1
Max
Unit
Test conditions
V
≥
CS
≥
V
CC
– 0.2 V
(1) 0 V
≤
Vin
≤
0.2 V or
(2) V
CC
≥
Vin
≥
V
CC
– 0.2 V
V
= 3 V, V
CC
≥
CS
≥
V
CC
– 0.2 V
(1) 0 V
≤
Vin
≤
0.2 V or
(2) V
CC
≥
Vin
≥
V
CC
– 0.2 V
See retention waveform
V
CC
for data retention
V
DR
2.0
—
—
V
Data retention current
I
CCDR
—
TBD
600
μ
A
Chip deselect to data
retention time
t
CDR
0
—
—
ns
Operation recovery time
Note: 1. Typical values are at V
CC
= 3.0 V, Ta = +25C, and not guaranteed.
t
R
5
—
—
ms
Low V
CC
Data Retention Timing Waveform
CC
V
3.0 V
0 V
CS
t
CDR
t
R
V
CC
≥
CS
≥
V
CC
– 0.2 V
2.0 V
DR
V
Data retention mode
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HM62W4100HC | 4M High Speed SRAM (1-Mword x 4-bit) |
| HM62W4100HJP-12 | 4M High Speed SRAM (1-Mword x 4-bit) |
| HM62W4100HJP-15 | 4M High Speed SRAM (1-Mword x 4-bit) |
| HM62W4100HLJP-12 | 4M High Speed SRAM (1-Mword x 4-bit) |
| HM62W4100HLJP-15 | 4M High Speed SRAM (1-Mword x 4-bit) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM62W4100HJP15 | 制造商:Renesas Electronics Corporation 功能描述: |
| HM62W8512BLFP-5 | 制造商:HITACHI 功能描述: |
| HM62W8512BLTTI7 | 制造商:Hitachi 功能描述: |
| HM-630 | 制造商:Black Box Corporation 功能描述:FACE PLATE:HM-STAINLESS |
| HM63021FP | 制造商:Panasonic Industrial Company 功能描述:IC |
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