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參數(shù)資料
| 型號(hào)： | HM62W16258BLTT-7 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4 M SRAM (256-kword x 16-bit) |
| 中文描述： | 四米的SRAM（256 - KWord的x 16位） |
| 文件頁數(shù)： | 6/16頁 |
| 文件大?。?/td> | 76K |
| 代理商： | HM62W16258BLTT-7 |
HM62W16258B Series
6
DC Characteristics
Parameter
Symbol Min
Typ*
1
Max
Unit
Test conditions
Input leakage current
|I
LI
|
|I
LO
|
—
—
1
μ
A
μ
A
Vin = V
SS
to V
CC
CS
= V
IH
or
OE
= V
or
WE
= V
IL
, or
L B
=
UB
=V
IH
, V
I/O
= V
SS
to V
CC
CS
= V
IL
, Others = V
IH
/V
IL
, I
I/O
= 0 mA
Min. cycle, duty = 100%,
I
= 0 mA,
CS
= V
IL
,
Others = V
IH
/V
IL
Output leakage current
—
—
1
Operating current
I
CC
—
—
20
mA
Average
operating
current
HM62W16258B-5 I
CC1
—
—
80
mA
HM62W16258B-7 I
CC1
—
—
70
mA
I
CC2
—
3
15
mA
Cycle time = 1
μ
s, duty = 100%,
I
I/O
= 0 mA,
CS
≤
0.2 V,
V
IH
≥
V
CC
– 0.2 V, V
IL
≤
0.2 V
CS
= V
IH
0 V
≤
Vin
CS
≥
V
CC
– 0.2 V
Standby current
I
SB
I
SB1
*
2
—
—
0.3
mA
Standby current
—
1
40
μ
A
I
SB1
*
3
V
OH
—
1
20
μ
A
Output high voltage
2.4
—
—
V
I
OH
= –1 mA
I
OH
= –100
μ
A
I
OL
= 2 mA
I
OL
= 100
μ
A
V
CC
– 0.2 —
—
—
V
Output low voltage
V
OL
—
0.4
V
—
—
0.2
V
Notes: 1. Typical values are at V
CC
= 3.0 V, Ta = +25
°
C and not guaranteed.
2. This characteristic is guaranteed only for L-version.
3. This characteristic is guaranteed only for L-SL version.
Capacitance
(Ta = +25
°
C, f = 1.0 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Note
Input capacitance
Cin
—
—
8
pF
Vin = 0 V
1
Input/output capacitance
Note:
1. This parameter is sampled and not 100% tested.
C
I/O
—
—
10
pF
V
I/O
= 0 V
1
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