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參數(shù)資料
| 型號： | HM62W16258BI |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4 M SRAM (256-kword ×16-bit)(4 M 靜態(tài)RAM(256k字×16位)) |
| 中文描述： | 四米的SRAM（256 - KWord的× 16位）（4個M靜態(tài)隨機存儲器（256k字× 16位）） |
| 文件頁數(shù)： | 5/14頁 |
| 文件大小： | 347K |
| 代理商： | HM62W16258BI |
HM62W16258BI Series
5
Capacitance (Ta = +25
°
C, f = 1.0 MHz)
Note: 1. This parameter is sampled and not 100% tested.
AC Characteristics (Ta =
–40 to +85
°
C, V
CC
= 3.3 V
±
0.3 V, unless otherwise noted.)
Test Conditions
Input pulse levels: V
IL
= 0.4 V, V
IH
= 2.4 V
Input rise and fall time: 5 ns
Input timing reference levels: 1.4 V
output timing reference levels: 1.4 V
Output load (Including scope and jig)
Read Cycle
Parameter
Input capacitance
Input/output capacitance
Symbol
Cin
C
I/O
Min
—
—
Typ
—
—
Max
8
10
Unit
pF
pF
Test conditions
Vin = 0 V
V
I/O
= 0 V
Note
1
1
Parameter
Read cycle time
Address access time
Chip select access time
Output enable to output valid
Output hold from address change
LB, UB access time
Chip select to output in low-Z
LB, UB enable to low-z
Output enable to output in low-Z
Chip deselect to output in high-Z
LB, UB disable to high-Z
Output disable to output in high-Z
HM62W16258BI
-7
Min
70
—
—
—
10
—
10
5
5
0
0
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Symbol
t
RC
t
AA
t
ACS
t
OE
t
OH
t
BA
t
CLZ
t
BLZ
t
OLZ
t
CHZ
t
BHZ
t
OHZ
Max
—
70
70
40
—
70
—
—
—
25
25
25
Notes
2, 3
2, 3
2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1.4 V
50 pF
500
Dout
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