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參數(shù)資料
| 型號： | HM62W16255HJPI-15 |
| 廠商： | Hitachi,Ltd. |
| 元件分類： | SRAM |
| 英文描述： | 4M High Speed SRAM (256-kword x 16-bit) |
| 中文描述： | 4分高速SRAM（256 - KWord的x 16位） |
| 文件頁數(shù)： | 6/18頁 |
| 文件大?。?/td> | 92K |
| 代理商： | HM62W16255HJPI-15 |
HM62W16255HC Series
6
Recommended DC Operating Conditions
(Ta = 0 to +70
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
V
CC
*
3
V
SS
*
4
V
IH
V
IL
3.0
3.3
3.6
V
0
0
0
V
Input voltage
2.0
—
V
CC
+ 0.5*
2
0.8
V
–0.5*
1
—
V
Notes: 1. V
IL
(min) = –2.0 V for pulse width (under shoot)
≤
6 ns
2. V
IH
(max) = V
CC
+ 2.0 V for pulse width (over shoot)
≤
6 ns
3. The supply voltage with all V
CC
pins must be on the same level.
4. The supply voltage with all V
SS
pins must be on the same level.
DC Characteristics
(Ta = 0 to +70
°
C, V
CC
= 3.3 V
±
0.3 V, V
SS
= 0 V)
Parameter
Symbol Min
Typ*
1
Max
Unit
Test conditions
Input leakage current
|I
LI
|
|I
LO
|
I
CC
—
—
2
μ
A
μ
A
Vin = V
SS
to V
CC
Vin = V
SS
to V
CC
Min cycle
CS
= V
, Iout = 0 mA
Other inputs = V
IH
/V
IL
Min cycle,
CS
= V
,
Other inputs = V
IH
/V
IL
f = 0 MHz
V
≥
CS
≥
V
CC
– 0.2 V,
(1) 0 V
≤
Vin
≤
0.2 V or
(2) V
CC
≥
Vin
≥
V
CC
– 0.2 V
Output leakage current
—
—
2
Operating power supply current
—
—
145
mA
Standby power supply current
I
SB
—
—
40
mA
I
SB1
—
TBD
5
mA
—*
2
TBD*
2
1.0*
2
Output voltage
V
OL
V
OH
—
—
0.4
V
I
OL
= 8 mA
I
OH
= –4 mA
2.4
—
—
V
Notes: 1. Typical values are at V
CC
= 3.3 V, Ta = +25
°
C and not guaranteed.
2. This characteristics is guaranteed only for L-version.
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| HM62W16255HTTI-15 | 4M High Speed SRAM (256-kword x 16-bit) |
| HM62W16255HJP-12 | 4M High Speed SRAM (256-kword x 16-bit) |
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| HM62W16255HLTT-15 | 4M High Speed SRAM (256-kword x 16-bit) |
| HM62W16255HJP-15 | 4M High Speed SRAM (256-kword x 16-bit) |
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