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參數(shù)資料
| 型號： | HM62V8100LTTI-5SL |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Wide Temperature Range Version 8 M SRAM (1024-kword ?8-bit) |
| 中文描述： | 寬溫版本八米的SRAM（1024 - KWord的？8位） |
| 文件頁數(shù)： | 9/21頁 |
| 文件大小： | 110K |
| 代理商： | HM62V8100LTTI-5SL |
HM62V8100I Series
7
Operation Table
CS1
CS2
WE
OE
I/O0 to I/O7
Operation
H
×
×
×
×
×
High-Z
Standby
×
L
High-Z
Standby
L
H
H
L
Dout
Read
L
H
L
×
Din
Write
L
Note: H: V
IH
, L: V
IL
,
×
: V
IH
or V
IL
H
H
H
High-Z
Output disable
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Power supply voltage relative to V
SS
Terminal voltage on any pin relative to V
SS
Power dissipation
V
CC
V
T
P
T
Tstg
–0.5 to + 4.6
V
–0.5*
1
to V
CC
+ 0.3*
2
1.0
V
W
Storage temperature range
–55 to +125
°
C
°
C
Storage temperature range under bias
Notes: 1. V
T
min: –3.0 V for pulse half-width
≤
30 ns.
2. Maximum voltage is +4.6 V.
Tbias
–40 to +85
DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
CC
V
SS
V
IH
V
IL
Ta
2.7
3.0
3.6
V
0
0
0
V
Input high voltage
2.2
—
V
CC
+ 0.3
0.6
V
Input low voltage
–0.3
—
V
1
Ambient temperature range
Note:
1. V
IL
min: –3.0 V for pulse half-width
≤
30 ns.
–40
—
85
°
C
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