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參數(shù)資料
| 型號： | HM62V16256CLBP-7 |
| 廠商： | Renesas Technology Corp. |
| 元件分類： | SRAM |
| 英文描述： | 4 M SRAM (256-kword x16-bit) |
| 中文描述： | 四米的SRAM（256 - KWord的x16位） |
| 文件頁數(shù)： | 5/18頁 |
| 文件大?。?/td> | 77K |
| 代理商： | HM62V16256CLBP-7 |
HM62V16256CI Series
5
Operation Table
CS1
CS2
WE
OE
UB
LB
I/O0 to I/O7
I/O8 to I/O15
Operation
H
×
×
×
×
×
×
×
×
×
×
×
High-Z
High-Z
Standby
×
×
L
High-Z
High-Z
Standby
×
H
H
High-Z
High-Z
Standby
L
H
H
L
L
L
Dout
Dout
Read
L
H
H
L
H
L
Dout
High-Z
Lower byte read
L
H
H
L
L
H
High-Z
Dout
Upper byte read
L
H
L
×
×
×
L
L
Din
Din
Write
L
H
L
H
L
Din
High-Z
Lower byte write
L
H
L
L
H
High-Z
Din
Upper byte write
L
Note: H: V
IH
, L: V
IL
,
×
: V
IH
or V
IL
H
H
H
×
×
High-Z
High-Z
Output disable
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Power supply voltage relative to V
SS
Terminal voltage on any pin relative to V
SS
Power dissipation
V
CC
V
T
P
T
Tstg
–0.5 to + 4.6
V
–0.5*
1
to V
CC
+ 0.3*
2
1.0
V
W
Storage temperature range
–55 to +125
°
C
°
C
Storage temperature range under bias
Notes: 1. V
T
min: –3.0 V for pulse half-width
≤
30 ns.
2. Maximum voltage is +4.6 V.
Tbias
–40 to +85
DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
CC
V
SS
2.2
2.5/3.0
3.6
V
0
0
0
V
Input high voltage
V
CC
= 2.2 V to 2.7 V V
IH
V
CC
= 2.7 V to 3.6 V V
IH
V
CC
= 2.2 V to 2.7 V V
IL
V
CC
= 2.7 V to 3.6 V V
IL
2.0
—
V
CC
+ 0.3
V
CC
+ 0.3
0.4
V
2.2
—
V
Input low voltage
–0.2
—
V
1
–0.3
—
0.6
V
1
Ambient temperature range
Note:
1. V
IL
min: –3.0 V for pulse half-width
≤
30 ns.
Ta
–40
—
85
°
C
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|---|---|
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