參數(shù)資料
型號(hào): HM6264BLFP-10
廠商: Hitachi,Ltd.
英文描述: 64 k SRAM (8-kword x 8-bit)
中文描述: 64畝的SRAM(8 - KWord的× 8位)
文件頁數(shù): 9/15頁
文件大?。?/td> 82K
代理商: HM6264BLFP-10
HM6264B Series
Write Cycle
HM6264B-8L
HM6264B-10L
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Write cycle time
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
t
OHZ
85
100
ns
Chip selection to end of write
75
80
ns
2
Address setup time
0
0
ns
3
Address valid to end of write
75
80
ns
Write pulse width
55
60
ns
1, 6
Write recovery time
WE
to output in high-Z
0
0
ns
4
0
30
0
35
ns
5
Data to write time overlap
40
40
ns
Data hold from write time
0
0
ns
Output active from end of write
5
5
ns
Output disable to output in high-Z
Notes: 1. A write occurs during the overlap of a low
CS1
, and high CS2, and a high
WE
. A write begins
at the latest transition among
CS1
going low,CS2 going high and
WE
going low. A write ends
at the earliest transition among
CS1
going high CS2 going low and
WE
going high. Time t
WP
is
measured from the beginning of write to the end of write.
2. t
CW
is measured from the later of
CS1
going low or CS2 going high to the end of write.
3. t
AS
is measured from the address valid to the beginning of write.
4. t
is measured from the earliest of
CS1
or
WE
going high or CS2 going low to the end of write
cycle.
5. During this period, I/O pins are in the output state, therefore the input signals of the opposite
phase to the outputs must not be applied.
6. In the write cycle with
OE
low fixed, t
WP
must satisfy the following equation to avoid a problem
of data bus contention
t
WP
t
WHZ
max + t
DW
min.
0
30
0
35
ns
5
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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