參數(shù)資料
型號(hào): HM6264ALP-12
廠商: Hitachi,Ltd.
英文描述: 8192-word x 8-bit High Speed CMOS Static RAM
中文描述: 8192字× 8位高速CMOS靜態(tài)RAM
文件頁(yè)數(shù): 9/10頁(yè)
文件大?。?/td> 54K
代理商: HM6264ALP-12
9
HM6264A Series
HM6264A Series
Low V
CC
Data Retention
Low VCCData Retention Characteristics
(Ta = 0 to +70°C)
This characteristics is guaranteed only L/LL-version.
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
V
CC
for data retention
V
DR
2.0
V
CS1
V
CC
– 0.2 V,
CS2
V
CC
– 0.2 V, or
CS2
0.2 V
Data retention current
I
CCDR
1
*1
50
*1
μA
V
CC
= 3.0 V,
CS1
V
CC
– 0.2 V,
CS2
V
CC
– 0.2 V, or
0 V
CS2
0.2 V, 0 V
Vin
1
*2
25
*2
Chip deselect to data
retention time
t
CDR
0
ns
See retention waveform
Operation recovery time
t
R
t
RC*3
ns
See retention waveform
Notes:
1. V
IL
min = –0.3 V, 20 μA max at Ta = 0 to 40°C. These characteristics are guaranteed only for
the L-version.
2. V
IL
min = –0.3 V, 10 μA max at Ta = 0 to 40°C. These characteristics are guaranteed only for
the LL-version.
3. t
RC
= Read cycle time.
Low V
CC
Data Retention Waveform (1)
(
CS1
Controlled)
In data retention mode, CS2 controls the address,
WE
,
CS1
,
OE
, and the Din buffer. If CS2 controls
data retention mode, Vin (for these inputs) can be
in the high impedance state. If CS1 controls the
data retention mode, CS2 must satisfy either
CS2
V
CC
– 0.2 V or CS2
0.2 V. The other
input levels (address,
WE
,
OE
, I/O) can be in the
high impedance state.
t
CDR
t
R
Data retention mode
CS1
V
CC
– 0.2 V
V
CC
4.5 V
2.2 V
V
DR
0 V
CS1
相關(guān)PDF資料
PDF描述
HM6264ALP-12L 8192-word x 8-bit High Speed CMOS Static RAM
HM6264ALP-12T 3-Line To 8-Line Decoders/Demultiplexers 20-LCCC -55 to 125
HM6264ALP-15 3-Line To 8-Line Decoders/Demultiplexers 16-CDIP -55 to 125
HM6264ALP-15L 3-Line To 8-Line Decoders/Demultiplexers 16-CFP -55 to 125
HM6264ALP-15LT 3-Line To 8-Line Decoders/Demultiplexers 16-CDIP -55 to 125
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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HM6264ALP-12T 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:8192-word x 8-bit High Speed CMOS Static RAM
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