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參數(shù)資料
| 型號： | HM6216255HCJP-10 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 330uF; Voltage: 35V; Case Size: 10x12.5 mm; Packaging: Bulk |
| 中文描述： | 4分高速SRAM（256 - KWord的x 16位） |
| 文件頁數(shù)： | 5/17頁 |
| 文件大?。?/td> | 95K |
| 代理商： | HM6216255HCJP-10 |
HM6216255HC Series
5
Operation Table
CS
OE
WE
LB
UB
Mode
V
CC
current
I
SB
, I
SB1
I
CC
I
CC
I/O1–I/O8
I/O9–I/O16
Ref. cycle
H
×
×
×
×
×
×
Standby
High-Z
High-Z
—
L
H
H
Output disable
High-Z
High-Z
—
L
L
H
L
L
Read
Output
Output
Read cycle
L
L
H
L
H
Lower byte read I
CC
Upper byte read I
CC
—
Output
High-Z
Read cycle
L
L
H
H
L
High-Z
Output
Read cycle
L
L
H
H
H
I
CC
I
CC
High-Z
High-Z
—
L
×
×
×
×
L
L
L
Write
Input
Input
Write cycle
L
L
L
H
Lower byte write I
CC
Upper byte write I
CC
—
Input
High-Z
Write cycle
L
L
H
L
High-Z
Input
Write cycle
L
Note:
L
H
H
I
CC
High-Z
High-Z
—
×
: H or L
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to V
SS
Voltage on any pin relative to V
SS
Power dissipation
V
CC
V
T
P
T
Topr
–0.5 to +7.0
V
–0.5*
1
to V
CC
+ 0.5*
2
1.0
V
W
Operating temperature
0 to +70
°
C
°
C
°
C
Storage temperature
Tstg
–55 to +125
Storage temperature under bias
Notes: 1. V
T
(min) = –2.0 V for pulse width (under shoot)
≤
6 ns.
2. V
T
(max) = V
CC
+ 2.0 V for pulse width (over shoot)
≤
6 ns.
Tbias
–10 to +85
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| HM6216255HI | 4M high Speed SRAM (256-kword x 16-bit) |
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相關(guān)代理商/技術(shù)參數(shù) |
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| HM6216255HCJP-12 | 制造商:Renesas Electronics 功能描述:32k~8 12ns 5V SOP Cut Tape |
| HM6216255HCJPI-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM: Notes on Usage Technical Update/Device |
| HM6216255HCLJP-10 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4M High Speed SRAM (256-kword x 16-bit) |
| HM6216255HCLJP-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM: Notes on Usage Technical Update/Device |
| HM6216255HCLTT-10 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4M High Speed SRAM (256-kword x 16-bit) |
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