參數(shù)資料
型號: HM621400HJP-12
廠商: Hitachi,Ltd.
英文描述: 4M High Speed SRAM (4-Mword x 1-bit)
中文描述: 4分高速SRAM(4 Mword × 1位)
文件頁數(shù): 4/13頁
文件大小: 73K
代理商: HM621400HJP-12
HM621400H Series
4
Operation Table
CS
OE
WE
Mode
V
CC
current
I
SB
, I
SB1
I
CC
I
CC
I
CC
I
CC
Dout
Ref. cycle
H
×
×
Standby
High-Z
L
H
H
Output disable
High-Z
L
L
H
Read
Dout
Read cycle (1) to (3)
L
H
L
Write
High-Z
Write cycle (1)
L
Note:
L
L
Write
High-Z
Write cycle (2)
×
: H or L
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to V
SS
Voltage on any pin relative to V
SS
Power dissipation
V
CC
V
T
P
T
Topr
–0.5 to +7.0
V
–0.5*
1
to V
CC
+0.5*
2
1.0
V
W
Operating temperature
0 to +70
°
C
°
C
°
C
Storage temperature
Tstg
–55 to +125
Storage temperature under bias
Notes: 1. V
T
(min) = –2.0 V for pulse width (under shoot)
8 ns
2. V
T
(max) = V
CC
+ 2.0 V for pulse width (over shoot)
8 ns
Tbias
–10 to +85
Recommended DC Operating Conditions
(Ta = 0 to +70
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
V
CC
*
3
V
SS
*
4
V
IH
V
IL
4.5
5.0
5.5
V
0
0
0
V
Input voltage
2.2
V
CC
+ 0.5*
2
0.8
V
–0.5*
1
V
Notes: 1. V
IL
(min) = –2.0 V for pulse width (under shoot)
8 ns
2. V
IH
(max) = V
CC
+ 2.0 V for pulse width (over shoot)
8 ns
3. The supply voltage with all V
CC
pins must be on the same level.
4. The supply voltage with all V
SS
pins must be on the same level.
相關(guān)PDF資料
PDF描述
HM621400HJP-15 4M High Speed SRAM (4-Mword x 1-bit)
HM621400HLJP-10 4M High Speed SRAM (4-Mword x 1-bit)
HM621400HLJP-12 4M High Speed SRAM (4-Mword x 1-bit)
HM621400HLJP-15 4M High Speed SRAM (4-Mword x 1-bit)
HM621400H 4M High Speed SRAM (4-Mword ×1-bit)(4M高速靜態(tài)RAM(4M字×1位))
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