參數(shù)資料
型號(hào): HM5164165FTT-5
廠商: Hitachi,Ltd.
英文描述: 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
中文描述: 6400 EDO公司的DRAM(4 Mword x 16位)8K的refresh/4k刷新
文件頁(yè)數(shù): 14/37頁(yè)
文件大小: 510K
代理商: HM5164165FTT-5
HM5164165F Series, HM5165165F Series
14
Write Cycle
HM5164165F/HM5165165F
-5
-6
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Write command setup time
t
WCS
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
0
0
ns
14, 27
Write command hold time
8
10
ns
27
Write command pulse width
Write command to
RAS
lead time
Write command to
CAS
lead time
8
10
ns
13
15
ns
8
10
ns
29
Data-in setup time
0
0
ns
15, 29
Data-in hold time
8
10
ns
15, 29
Read-Modify-Write Cycle
HM5164165F/HM5165165F
-5
-6
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Read-modify-write cycle time
RAS
to
WE
delay time
CAS
to
WE
delay time
Column address to
WE
delay time
OE
hold time from
WE
t
RWC
t
RWD
t
CWD
t
AWD
t
OEH
116
140
ns
67
79
ns
14
30
34
ns
14
42
49
ns
14
13
15
ns
Refresh Cycle
HM5164165F/HM5165165F
-5
-6
Parameter
CAS
setup time (CBR refresh cycle)
CAS
hold time (CBR refresh cycle)
WE
setup time (CBR refresh cycle)
WE
hold time (CBR refresh cycle)
RAS
precharge to
CAS
hold time
Symbol
Min
Max
Min
Max
Unit
Notes
t
CSR
t
CHR
t
WRP
t
WRH
t
RPC
5
5
ns
27
8
10
ns
28
0
0
ns
8
10
ns
5
5
ns
27
相關(guān)PDF資料
PDF描述
HM5165165FTT-5 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
HM5164165FTT-6 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
HM5165165FTT-6 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
HM5165165FJ-5 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
HM5165165FJ-6 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
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