參數(shù)資料
型號: HM5117400AS7GS
廠商: Electronic Theatre Controls, Inc.
英文描述: CMOS 4194304 WORD 8-BIT DYNAMIC RAM
中文描述: 4194304字的CMOS 8位動態(tài)隨機存儲器
文件頁數(shù): 2/2頁
文件大?。?/td> 44K
代理商: HM5117400AS7GS
HM5117400AS7GS (2/2)
COLUMN DECODER & DRIVER
COLUMN ADDRESS BUFFER
RAS
RAS CONT.
CIRCUIT
CAS
CAS CONT.
CIRCUIT
COLUMN DECODER & DRIVER
ROW ADDRESS BUFFER
WE
WE CONT.
CIRCUIT
OE
OE CONT.
CIRCUIT
ROW
DECODER
&
DRIVER
ROW
DECODER
&
DRIVER
I/O 4 BUFFER
I/O 4
I/O 3 BUFFER
I/O 3
I/O 2 BUFFER
I/O 2
I/O 1 BUFFER
I/O 1
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
256K MEMORY CELL ARRAY
SENSE AMP. & I/O BUS
256K MEMORY CELL ARRAY
ADDRESS A0-A10
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HM5117400B 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4194304-WORD X 4-BIT DYNAMIC RANDOM ACCESS MEMORY
HM5117400BLS-6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
HM5117400BLS-7 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
HM5117400BLS-8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
HM5117400BLTS-6 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4194304-WORD X 4-BIT DYNAMIC RANDOM ACCESS MEMORY