參數(shù)資料
型號: HLX6228KBF
廠商: Electronic Theatre Controls, Inc.
英文描述: 128K x 8 STATIC RAM?Low Power SOI
中文描述: 128K的× 8靜態(tài)RAM?低功耗絕緣硅
文件頁數(shù): 5/12頁
文件大小: 156K
代理商: HLX6228KBF
5
HLX6228
Symbol
Parameter
Typ
(1)
Worst Case
(2)
Units Test Conditions
Min
Max
IDDSB1
Static Supply Current
700
μ
A
VIH=VDD IO=0
VIL=VSS Inputs Stable
IDDSBMF Standby Supply Current – Deselected/Disabled
700
μ
A
NCS=VDD, CE=VSS, IO=0,
f=40 MHz
IDDOPW
Dynamic Supply Current, Selected (Write)
3.2
mA
f=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS (3)
IDDOPR
Dynamic Supply Current, Selected (Read)
2.2
mA
f=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS (3)
II
Input Leakage Current
5
5
μ
A
VSS VI VDD
IOZ
Output Leakage Current
-10
10
μ
A
VSS VIO VDD, Output=High Z
VIL
Low-Level Input Voltage
.275xV
DD
V
March Pattern VDD = 3.0V
VIH
High-Level Input Voltage
.725xV
DD
V
March Pattern VDD = 3.6V
VOL
Low-Level Output Voltage
0.4
V
VDD = 3.0V, IOL = 8 mA
VOH
High-Level Output Voltage
2.7
V
VDD = 3.0V, IOH = -4 mA
DC ELECTRICAL CHARACTERISTICS
(1) Typical operating conditions: VDD=3.3 V, TA=25
°
C, pre-radiation.
(2) Worst case operating conditions: VDD=3.0 V to 3.6 V, -55
°
C to +125
°
C, post total dose at 25
°
C.
(3) All inputs switching. DC average current.
DUT
output
Valid low
output
Vref1
CL>50 pF*
249
Tester Equivalent Load Circuit
2.2 V
Valid high
output
Vref2
-
+
-
+
*CL = 5 pF for TWLQZ, TSHQZ, TELQZ, and TGHQZ
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