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參數(shù)資料
| 型號： | HLMP-QB00 |
| 英文描述： | Subminiature InGaN Blue Lamps(超小型銦氮化鎵藍色燈) |
| 中文描述： | 微型InGaN藍色燈（超小型銦氮化鎵藍色燈） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 24K |
| 代理商： | HLMP-QB00 |
Subminiature InGaN Blue Lamps
Reliability Data
Description
The following cumulative test
results have been obtained from
testing performed at HP Optoelec-
tronics Division in accordance
with the latest revision of
MIL- STD-883.
Hewlett-Packard tests parts at the
absolute maximum rated condi-
tions recommended for the
device. The actual performance
you obtain from HP parts depends
on the electrical and environmen-
tal characteristics of your applica-
Table 1. Life Tests
Demonstrated Performance
HLMP-PB00
HLMP-QB00
tion but will probably be better
than the performance outlined in
Table 1.
P
AVG
= average power dissipated
in watts
The estimated MTBF and failure
rate at temperatures lower than
the actual stress temperature can
be determined by using an
Arrhenius model for temperature
acceleration. Results of such
calculations are shown in the
table below using an activation
energy of 0.43 eV (reference
MIL-HDBK-217).
Failure Rate Prediction
The failure rate of semiconductor
devices is determined by the
junction temperature of the
device. The relationship between
ambient temperature and actual
junction temperature is given by
the following:
T
J
(
°
C) = T
A
(
°
C) +
θ
JA
P
AVG
where T
A
= ambient temperature
in
°
C
θ
JA
= thermal resistance of
junction-to-ambient in
°
C/watt
Point Typical Performance
Total
Failed
MTBF
Stress Test
Conditions
Total Device
Hours
Units
Tested
Failure Rate
(% /1 K Hours)
Colors
InGaN Blue
InGaN Blue
InGaN Blue
InGaN Blue
InGaN Blue
T
A
= 25
°
C, I
F
= 30 mA
T
A
= 85
°
C, I
F
= 30 mA
T
A
= 100
°
C, I
F
= 10 mA
T
A
= -40
°
C, I
F
= 30 mA
T
A
= -55
°
C, I
F
= 30 mA
672,000
168,000
168,000
168,000
168,000
672
168
168
168
168
0
0
0
0
0
672,000
168,000
168,000
168,000
168,000
<0.149
<0.595
<0.595
<0.595
<0.595
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