參數(shù)資料
型號(hào): HLMP-EH55-GJK00
英文描述: T-1 3/4 (5 mm) Precision Optical Performance AlInGaP LED Lamps
中文描述: 的T 1 3 / 4(5毫米)精密光學(xué)性能的AlInGaP LED燈具
文件頁(yè)數(shù): 4/6頁(yè)
文件大小: 688K
代理商: HLMP-EH55-GJK00
4
Electrical/Optical Characteristics at TA = 25°C
Parameter
Symbol
Min.
Typ.
Max.
Units
Test Conditions
Forward Voltage
VF
VIF = 20 mA
Amber (
λ
d = 590 nm)
2.02
2.4
Amber (
λ
d = 592 nm)
2.15
2.4
Red-Orange (
λ
d = 615 nm)
1.94
2.4
Red-Orange (
λ
d = 617 nm)
2.08
2.4
Red (
λ
d = 626 nm)
1.90
2.4
Red (
λ
d = 630 nm)
2.00
2.4
Reverse Voltage
VR
520
V
IR = 100 A
Peak Wavelength
λ
PEAK
nm
Peak of Wavelength of
Amber (
λ
d = 590 nm)
592
Spectral Distribution
Amber (
λ
d = 592 nm)
594
at IF = 20 mA
Red-Orange (
λ
d = 615 nm)
621
Red-Orange (
λ
d = 617 nm)
623
Red (
λ
d = 626 nm)
635
Red (
λ
d = 630 nm)
639
Spectral Halfwidth
λ
1/2
17
nm
Wavelength Width at
Spectral Distribution
1/2 Power Point at
IF = 20 mA
Speed of Response
τ
s
20
ns
Exponential Time
Constant, e-t/τs
Capacitance
C
40
pF
VF = 0, f = 1 MHz
Thermal Resistance
R
θ
J-PIN
240
°C/W
LED Junction-to-Cathode
Lead
Luminous Efficacy[1]
η
v
lm/W
Emitted Luminous
Amber (
λ
d = 590 nm)
480
Power/Emitted Radiant
Amber (
λ
d = 592 nm)
500
Power
Red-Orange (
λ
d = 615 nm)
260
Red-Orange (
λ
d = 617 nm)
235
Red (
λ
d = 626 nm)
150
Red (
λ
d = 630 nm)
155
Note:
1. The radiant intensity, Ie, in watts per steradian, may be found from the equation Ie = Ivv, where Iv is the luminous intensity in candelas and ηv is
the luminous efficacy in lumens/watt.
Absolute Maximum Ratings at TA = 25°C
DC Forward Current[1,2,3] ..................................................................50 mA
Peak Pulsed Forward Current[2,3] ................................................. 100 mA
Average Forward Current[3] ............................................................. 30 mA
Reverse Voltage (IR = 100 A) ................................................................ 5 V
LED Junction Temperature .............................................................. 130
° C
Operating Temperature .................................................. –40
° C to +100° C
Storage Temperature ...................................................... –40
° C to +120° C
Through-the-Wave Solder Temperature ................ 250
° C for 3 seconds
[1.59 mm (0.060 in.) below body]
Notes:
1. Derate linearly as shown in Figure 4.
2. For long term performance with minimal light output degradation, drive currents
between 10 mA and 30 mA are recommended. For more information on recommended
drive conditions, please refer to Application Brief I-024 (5966-3087E).
3. Please contact your Agilent Technologies sales representative about operating currents
below 10 mA.
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