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參數(shù)資料
| 型號(hào)： | HL6336G |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Circular Beam Low Operating Current |
| 中文描述： | 圓梁低工作電流 |
| 文件頁(yè)數(shù)： | 7/10頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | HL6336G |
HL6335G/36G
Rev.3, Mar. 2002, page 7 of 10
The Cautions on the Handing of HL6335G/36G
As laser diode differ from silicon devices, the area of safe operation (ASO) of laser diodes is not decided by
power consumption alone, but optical output must be considered from view point of optical damage. These
products are more sensitive to static electricity or an surge current than the conventional product. The
following is test data of ESD (electric static damage). The operating condition should be within 5 mW and
the working please should be keep small static electricity level such as 20 V less and small surge current
such as 40 mA less from out.
N = 5
R = 0
C = 200pF
Forward
: HL6335G
: HL6312G
100
0
20
40
60
80
0
200
400
Applied voltage V
CC
(V)
1. Electrostatic destructive examination data
S
100
0
20
40
60
80
S
100
0
20
40
60
80
S
100
0
20
40
60
80
S
600
800
0
0.5
Applied voltage V
CC
(kV)
1.0
1.5
2.5
2.0
3.0
0
0.5
Applied voltage V
CC
(kV)
1.0
1.5
2.5
2.0
3.0
0
20
Applied voltage V
CC
(V)
40
60
100
80
120
N = 5
R = 1.5k
C = 100pF
Forward
N = 5
R = 1.5k
C = 100pF
Reverse
Step stress test (5 times/voltage)
Failure criteria
I
OP
≥
10%
V
CC
C
DUT
R
N = 5
R = 0
C = 200pF
Reverse
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HL6339G | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:633nm Lasing Laser Diode |
| HL6339G/42G | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| HL6340MG | 制造商:OPNEXT 制造商全稱:OPNEXT 功能描述:Circular Beam Low Operating Current |
| HL6340MG/41MG | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| HL6340MG_06 | 制造商:OPNEXT 制造商全稱:OPNEXT 功能描述:Circular Beam Low Operating Current |
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