參數(shù)資料
型號： HIP2060AS3
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 20000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
中文描述： 10 A, 60 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： SIP-5
文件頁數(shù)： 1/8頁
文件大?。?/td> 59K
代理商： HIP2060AS3
1
April 1998
HIP2060
60V, 10A Half Bridge Power MOSFET Array
Features
Two 10A Power MOS N-Channel Transistors
Output Voltage to 60V
r
DS(ON)
. . . . . 0.135
Max Per Transistor at V
GS
= 15V
r
DS(ON)
. . . . . . 0.15
Max Per Transistor at V
GS
= 10V
Pulsed Current. . . . . . . . . . . . . . . .25A Each Transistor
Avalanche Energy . . . . . . . . . . 100mJ Each Transistor
Grounded Tab Eliminates Heat Sink Isolation
Description
The HIP2060 is a power half-bridge MOSFET array that con-
sists of two matched N-Channel enhancement-mode MOS
transistors. The advanced Intersil PASIC2 process technol-
ogy used in this product utilizes efficient geometries that pro-
vides outstanding device performance and ruggedness.
The HIP2060 is designed to integrate two power devices in
one chip thus providing board layout area and heat sink sav-
ings for applications such as Motor Controls, Uninterruptable
Power Supplies, Switch Mode Power Supplies, Voice Coil
Motors, and Class D Power Amplifier.
Symbol
Ordering Information
PART NUMBER
TEMP.
RANGE (
o
C)
PACKAGE
PKG.
NO.
HIP2060AS1
-40 to 125
5 Ld SIP
Z5.067C
HIP2060AS2
-40 to 125
5 Ld Gullwing SIP
Z5.067A
HIP2060AS3
-40 to 125
5 Ld SIP
Z5.067B
NOTE: When ordering use the entire part number.
GATE1
GATE2
1
5
2
SOURCE1 = DRAIN2
4
SOURCE2
Z1
Z2
3, TAB
D1
DRAIN1
Packages
JEDEC TS-001AA (ALTERNATE VERSION)
HIP2060 AS1
JEDEC MO-169
HIP2060 AS2
Z5.067B (SIP)
HIP2060 AS3
54321
(TAB)
5 DRAIN1
4 SOURCE1-DRAIN2
3 SOURCE2
2 GATE2
1 GATE1
File Number
3983.5
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
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