參數(shù)資料
型號(hào): HI5731-EVS
廠商: Intersil Corporation
英文描述: 12-Bit, 100 MSPS, High Speed D/A Converter
中文描述: 12位,100 MSPS的,高速D / A轉(zhuǎn)換
文件頁(yè)數(shù): 15/15頁(yè)
文件大小: 370K
代理商: HI5731-EVS
3-15
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
Die Characteristics
DIE DIMENSIONS:
161.5 mils x 160.7 mils x 19 mils
METALLIZATION:
Type: AlSiCu
Thickness: M1 - 8k
, M2 - 17k
PASSIVATION:
Type: Sandwich Passivation
Undoped Silicon Glass (USG) + Nitride
Thickness: USG - 8k
, Nitride - 4.2k
Total 12.2k
+ 2k
SUBSTRATE POTENTIAL (POWERED UP):
V
EED
Metallization Mask Layout
HI5731
D8
D9
D10
D11
DGND
A
R
CTRL OUT
I
OUT
I
OUT
ARTN
DV
EE
DGND
DV
CC
CLK
D0
D1
D2
D3
D4
D5
D6
D7
R
SET
AV
EE
CTRL IN
HI5731
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