參數(shù)資料
型號(hào)： HGTP7N60C3DS
英文描述： TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB
中文描述： 晶體管| IGBT的|正陳| 600V的五（巴西）國(guó)際消費(fèi)電子展|第14A一（c）|至263AB
文件頁(yè)數(shù)： 2/9頁(yè)
文件大小： 216K
代理商： HGTP7N60C3DS
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTP7N60C3D, HGT1S7N60C3DS
600
UNITS
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Average Diode Forward Current at 110
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
14
7
8
56
±
20
±
30
A
A
A
A
V
V
40A at 480V
60
0.487
-40 to 150
260
1
8
W
W/
o
C
o
C
o
C
μ
s
μ
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 50
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
BV
CES
I
CES
TEST CONDITIONS
MIN
600
-
-
-
-
3.0
-
40
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
1.6
1.9
5.0
-
-
-
8
23
30
8.5
11.5
350
140
165
600
1.9
25
18
-
-
MAX
-
250
2.0
2.0
2.4
6.0
±
250
-
-
-
30
38
-
-
400
275
-
-
2.5
37
30
2.1
2.0
UNITS
V
μ
A
mA
V
V
V
nA
A
A
V
nC
nC
ns
ns
ns
ns
μ
J
μ
J
V
ns
ns
o
C/W
o
C/W
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
C
= 250
μ
A, V
GE
= 0V
V
CE
= BV
CES
V
CE
= BV
CES
I
C
= I
C110
,
V
GE
= 15V
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
Collector to Emitter Saturation Voltage
V
CE(SAT)
Gate-Emitter Threshold Voltage
Gate-Emitter Leakage Current
Switching SOA
V
GE(TH)
I
GES
SSOA
I
C
= 250
μ
A, V
CE
= V
GE
V
GE
=
±
25V
T
J
= 150
o
C, R
G
= 50
,
V
GE
= 15V, L = 1mH
V
CE(PK)
= 480V
V
CE(PK)
= 600V
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
GEP
Q
G(ON)
I
C
= I
C110
, V
CE
= 0.5 BV
CES
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
T
J
= 150
o
C
I
CE
= I
C110
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 50
L = 1mH
V
GE
= 15V
V
GE
= 20V
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
V
EC
t
rr
I
EC
= 7A
I
EC
= 7A, dI
EC
/dt = 200A/
μ
s
I
EC
= 1A, dI
EC
/dt = 200A/
μ
s
IGBT
Diode
Thermal Resistance
R
θ
JC
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). The HGTP7N60C3D and HGT1S7N60C3DS were tested per JEDEC standard
No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Turn-On losses include diode losses.
HGTP7N60C3D, HGT1S7N60C3DS
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