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參數(shù)資料
| 型號： | HGTP7N60A4D |
| 廠商： | INTERSIL CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 34 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 134K |
| 代理商： | HGTP7N60A4D |
2-5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
100
60
80
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
180
140
160
120
V
GE
= 15V, T
J
= 125
o
C
R
G
= 25
, L = 1mH, V
CE
= 390V
4
2
6
8
10
12
14
0
V
GE
= 12V, T
J
= 125
o
C
V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, T
J
= 25
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
20
40
30
60
80
50
70
R
G
= 25
, L = 1mH, V
CE
= 390V
90
T
J
= 125
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
4
2
6
8
10
12
14
0
I
C
,
0
40
60
8
9
11
12
15
V
GE
, GATE TO EMITTER VOLTAGE (V)
14
80
100
120
7
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= 125
o
C
T
J
= -55
o
C
T
J
= 25
o
C
20
13
10
V
G
,
Q
G
, GATE CHARGE (nC)
0
3
I
G(REF)
= 1mA, R
L
= 43
, T
J
= 25
o
C
V
CE
= 200V
V
CE
= 400V
6
9
12
15
5
10
15
20
30
25
35
40
0
V
CE
= 600V
I
CE
= 3.5A
0
200
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
400
125
25
150
800
E
T
,
μ
J
E
TOTAL
= E
ON2
+ E
OFF
R
G
= 25
, L = 1mH, V
CE
= 390V, V
GE
= 15V
600
I
CE
= 14A
I
CE
= 7A
0.1
100
R
G
, GATE RESISTANCE (
)
1
10
1000
E
T
,
10
T
J
= 125
o
C, L = 1mH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 3.5A
I
CE
= 7A
I
CE
= 14A
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
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PDF描述 |
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| HGT1S7N60A4DS | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG7N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTP7N60A4D | V7 Series Miniature Basic Switch, Single Pole Double Throw Circuitry, 5 A at 250 Vac, Straight Lever Actuator, 0,45 N [1.6 oz] Maximum Operating Force, Silver Contacts, Quick Connect Termination |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP7N60A4NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTP7N60B3 | 制造商:Harris Corporation 功能描述: |
| HGTP7N60B3D | 功能描述:IGBT 晶體管 PWR IGBT 14A 600V N-CHANNEL RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP7N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP7N60C3D | 功能描述:IGBT 晶體管 14a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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