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參數(shù)資料
| 型號： | HGTP5N120BND_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 21 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220AB ALTERNATE VERSION, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 216K |
| 代理商： | HGTP5N120BND_NL |
2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
t dI
,
T
URN-
ON
DEL
A
Y
T
IM
E
(n
s
)
3
2
46
20
30
57
9
810
40
35
25
15
RG = 25, L = 5mH, VCE = 960V
TJ = 25
oC, T
J = 150
oC, V
GE = 12V
TJ = 25
oC, T
J = 150
oC, V
GE = 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
t rI
,R
IS
E
T
IM
E
(n
s
)
0
10
15
40
20
4
2
30
37
6
5
25
10
9
8
35
RG = 25, L = 5mH, VCE = 960V
TJ = 25
oC, T
J = 150
oC, V
GE = 15V
TJ = 25
oC, T
J = 150
oC, V
GE = 12V
10
100
ICE, COLLECTOR TO EMITTER CURRENT (A)
t d(
O
FF)
I,
T
URN-
O
F
DEL
A
Y
T
IM
E
(n
s
)
250
225
200
175
150
234
56
789
RG = 25, L = 5mH, VCE = 960V
VGE = 12V, VGE = 15V, TJ = 150
oC
VGE = 12V, VGE = 15V, TJ = 25
oC
125
ICE, COLLECTOR TO EMITTER CURRENT (A)
t fI
,F
A
LL
TI
ME
(n
s
)
150
50
250
100
200
23
45678
9
10
RG = 25, L = 5mH, VCE = 960V
TJ = 25
oC, V
GE = 12V OR 15V
TJ = 150
oC, V
GE = 12V OR 15V
I CE
,
COL
L
ECT
O
R
T
O
E
M
IT
T
E
R
CUR
RE
NT
(
A
)
0
10
20
30
13
78
9
10
12
VGE, GATE TO EMITTER VOLTAGE (V)
11
40
50
60
14
15
70
TC = 25
oC
TC = -55
oC
TC = 150
oC
80
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, VCE = 20V
V
GE
,G
A
T
E
T
O
E
M
IT
T
E
R
V
O
L
T
A
G
E
(V
)
QG, GATE CHARGE (nC)
14
4
16
2
6
0
60
50
40
8
10
12
30
20
10
0
VCE = 800V
VCE = 400V
VCE = 1200V
IG(REF) = 1mA, RL = 120, TC = 25
oC
HGTG5N120BND, HGTP5N120BND
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP5N120CN | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP5N120CND | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTP5N120CNS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB |
| HGTP5N120CNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB |
| HGTP6N40E1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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