參數(shù)資料
型號(hào)： HGTP5N120
廠商： Intersil Corporation
英文描述： 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
中文描述： 21A條，1200伏，不擴(kuò)散核武器條約系列N溝道IGBT的與反平行Hyperfast二極管
文件頁(yè)數(shù)： 6/7頁(yè)
文件大小： 89K
代理商： HGTP5N120
6
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
0.5
C
IES
C
OES
1.0
C
RES
FREQUENCY = 1MHz
C
1.5
2.0
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
0.5
1.0
DUTY CYCLE < 0.5%, T
C
= 110
o
C
PULSE DURATION = 250
μ
s
V
GE
= 15V
V
GE
= 10V
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
2
4
6
8
10
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
-4
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
x Z
θ
JC
x R
θ
JC
) + T
C
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
t
1
t
2
P
D
1
10
100
0
1
2
3
4
5
6
7
8
I
F
,
V
F
, FORWARD VOLTAGE (V)
150
o
C
-55
o
C
25
o
C
60
50
40
30
20
10
0
1
2
3
4
5
6
7
I
F
, FORWARD CURRENT (A)
t
T
C
= 25
o
C, dl
EC
/ dt = 200A/
μ
s
t
rr
t
a
t
b
HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS
相關(guān)PDF資料
PDF描述
HGTP5N120CNS TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB
HGTP5N120CNS9A TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB
HGT1S5N120BNDS 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管)
HGTG5N120BND 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管)
HGTP5N120BND 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTP5N120BN 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:21A, 1200V, NPT Series N-Channel IGBTs
HGTP5N120BND 功能描述:IGBT 晶體管 21a 1200V IGBT NPT Series N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTP5N120CN 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTP5N120CND 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP5N120CNS 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB
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