參數(shù)資料
型號(hào)： HGTP3N60B3
廠商： INTERSIL CORP
元件分類(lèi)： IGBT 晶體管
英文描述： 7A, 600V, UFS Series N-Channel IGBTs
中文描述： 7 A, 600 V, N-CHANNEL IGBT, TO-220AB
文件頁(yè)數(shù)： 8/10頁(yè)
文件大?。?/td> 156K
代理商： HGTP3N60B3
8
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4
TO-252AA
SURFACE MOUNT JEDEC TO-252AA PLASTIC PACKAGE
TO-252AA
16mm TAPE AND REEL
b
2
E
D
L
3
L
e
b
1
b
1
3
A
L
c
SEATING
PLANE
BACK VIEW
2
H
1
A
1
b
3
e
1
J
1
L
1
TERM. 4
0.265
(6.7)
MINIMUM PAD SIZE RECOMMENDED FOR
SURFACE-MOUNTED APPLICATIONS
0.265 (6.7)
0.070 (1.8)
0.118 (3.0)
0.063 (1.6) TYP
0.090 (2.3) TYP
SYMBOL
A
A
1
b
b
1
b
2
b
3
c
D
E
e
e
1
H
1
J
1
L
L
1
L
2
L
3
NOTES:
1. These dimensions are within allowable dimensions of Rev. B of
JEDEC TO-252AA outline dated 9-88.
2. L
3
and b
3
dimensions establish a minimum mounting surface for
terminal 4.
3. Solder finish uncontrolled in this area.
4. Dimension (without solder).
5. Add typically 0.002 inches (0.05mm) for solder plating.
6. L
1
is the terminal length for soldering.
7. Positionofleadtobemeasured0.090inches(2.28mm)frombottom
of dimension D.
8. Controlling dimension: Inch.
9. Revision 9 dated 5-99.
INCHES
MIN
0.086
0.018
0.028
0.033
0.205
0.190
0.018
0.270
0.250
0.090 TYP
0.180 BSC
0.035
0.040
0.100
0.020
0.025
0.170
MILLIMETERS
MIN
2.19
0.46
0.72
0.84
5.21
4.83
0.46
6.86
6.35
2.28 TYP
4.57 BSC
0.89
1.02
2.54
0.51
0.64
4.32
NOTES
-
4, 5
4, 5
4
4, 5
2
4, 5
-
-
7
7
-
-
-
4, 6
3
2
MAX
0.094
0.022
0.032
0.040
0.215
-
0.022
0.290
0.265
MAX
2.38
0.55
0.81
1.01
5.46
-
0.55
7.36
6.73
0.045
0.045
0.115
-
0.040
-
1.14
1.14
2.92
-
1.01
-
2.0mm
4.0mm
1.5mm
DIA. HOLE
8.0mm
16mm
USER DIRECTION OF FEED
C
1.75mm
330mm
50mm
13mm
22.4mm
16.4mm
COVER TAPE
GENERAL INFORMATION
1. 2500 PIECES PER REEL.
2. ORDER IN MULTIPLES OF FULL REELS ONLY.
3. MEETS EIA-481 REVISION "A" SPECIFICATIONS.
相關(guān)PDF資料
PDF描述
HGTP3N60A4 600V, SMPS Series N-Channel IGBT
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HGTP3N60C3 72 MACROCELL 3.3 VOLT ISP CPLD
HGTP3N60A4D9A 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTP3N60B3D 制造商:Harris Corporation 功能描述:
HGTP3N60B3R4724 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTP3N60C3 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTP3N60C3D 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTP3N60C3D_07 制造商:HARRIS 制造商全稱(chēng):HARRIS 功能描述:6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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