參數(shù)資料
型號: HGTP3N60A4_NL
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: 600V, NPT Series N-Channel IGBT
中文描述: 17 A, 600 V, N-CHANNEL IGBT, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 6/8頁
文件大小: 189K
代理商: HGTP3N60A4_NL
2003 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGTP3N60A4 Rev. B1
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Typical Performance Curves Unless Otherwise Specified (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
C
,CAP
A
C
IT
ANCE
(
p
F
)
0
204060
80
100
0
200
400
500
700
300
600
100
FREQUENCY = 1MHz
CIES
COES
CRES
VGE, GATE TO EMITTER VOLTAGE (V)
8
2.0
10
12
2.1
2.4
2.2
14
16
2.6
2.7
V
CE
,
COL
L
ECT
O
R
T
O
E
M
IT
T
E
R
V
O
L
T
A
G
E
(
V
)
2.3
2.5
DUTY CYCLE < 0.5%, TJ = 25
oC
PULSE DURATION = 250
s,
ICE = 4.5A
ICE = 1.5A
ICE = 3A
t1, RECTANGULAR PULSE DURATION (s)
Z
qJC
,
N
O
R
M
A
L
IZED
THERM
A
L
RESPO
NSE
10-2
10-1
100
10-5
10-3
10-2
10-1
100
10-4
t1
t2
PD
SINGLE PULSE
0.1
0.2
0.5
0.05
0.01
0.02
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZqJC X RqJC) + TC
HGTD3N60A4S, HGTP3N60A4
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