參數(shù)資料
型號: HGTP20N60A4_NL
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: 600V, SMPS Series N-Channel IGBTs
中文描述: 70 A, 600 V, N-CHANNEL IGBT
封裝: TO-220AB ALTERNATE VERSION, 3 PIN
文件頁數(shù): 6/8頁
文件大?。?/td> 140K
代理商: HGTP20N60A4_NL
2001 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. B
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
C,
CAP
A
C
IT
ANCE
(n
F
)
0
204060
80
100
0
1
3
4
5
2
FREQUENCY = 1MHz
CIES
COES
CRES
VGE, GATE TO EMITTER VOLTAGE (V)
89
1.7
10
12
1.8
2.0
1.9
11
13
14
15
16
2.1
2.2
V
CE
,
COL
L
ECT
O
R
T
O
E
M
IT
T
E
R
V
O
L
T
A
G
E
(
V
)
ICE = 30A
ICE = 20A
ICE = 10A
DUTY CYCLE < 0.5%, TJ = 25
oC
PULSE DURATION = 250
s,
t1, RECTANGULAR PULSE DURATION (s)
Z
θJC
,
N
O
R
M
A
LI
ZED
T
H
ER
MA
L
R
E
S
P
O
N
S
E
10-2
10-1
100
10-5
10-3
10-2
10-1
100
10-4
t1
t2
PD
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
0.1
0.2
0.5
0.05
0.01
0.02
RG = 3
L = 500
H
VDD = 390V
+
-
HGTG20N60A4D
DUT
DIODE TA49372
tfI
td(OFF)I
trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON2
HGTG20N60A4, HGTP20N60A4
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