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參數(shù)資料
| 型號： | HGTP1N120BN |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5.3A, 1200V, NPT Series N-Channel IGBT(5.3A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 5.3 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 71K |
| 代理商： | HGTP1N120BN |
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= 1.0A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82
L = 4mH
Test Circuit (Figure 18)
-
15
20
ns
Current Rise Time
t
rI
-
11
14
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
67
76
ns
Current Fall Time
t
fI
-
226
300
ns
Turn-On Energy (Note 5)
E
ON1
-
70
-
J
Turn-On Energy (Note 5)
E
ON2
-
172
187
J
Turn-Off Energy (Note 4)
E
OFF
-
90
123
J
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= 1.0 A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82
L = 4mH
Test Circuit (Figure 18)
-
13
17
ns
Current Rise Time
t
rI
-
11
15
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
75
88
ns
Current Fall Time
t
fI
-
258
370
ns
Turn-On Energy (Note 5)
E
ON1
-
145
-
J
Turn-On Energy (Note 5)
E
ON2
-
385
440
J
Turn-Off Energy (Note 4)
E
OFF
-
120
175
J
Thermal Resistance Junction To Case
R
θ
JC
-
-
2.1
o
C/W
NOTES:
4. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in Figure 18.
Typical Performance Curves
(Unless Otherwise Specified)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
0
4
5
1
25
75
100
125
150
3
2
6
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
3
0
I
C
,
1
2
600
800
400
200
1000
1200
0
4
6
5
7
T
J
= 150
o
C, R
G
= 82
, V
GE
= 15V, L = 2mH
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