參數(shù)資料
型號: HGTP15N40E1
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 15A, 20A, 400V and 500V N-Channel IGBTs
中文描述: 15 A, 400 V, N-CHANNEL IGBT, TO-220AB
文件頁數(shù): 5/5頁
文件大?。?/td> 35K
代理商: HGTP15N40E1
3-65
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ISO9000
quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
EUROPE
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Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1
FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF
SWITCHING LOSS/CYCLE
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT. (REFER TO APPLICA-
TION NOTES AN7254 AND AN7260 ON THE USE
OF NORMALIZED SWITCHING WAVEFORMS)
Test Circuit
FIGURE 15. INDUCTIVE SWITCHING TEST CIRCUIT
Typical Performance Curves
(Continued)
1000
900
800
700
600
500
400
300
200
100
0
+25
+50
T
J
, JUNCTION TEMPERATURE (
o
C)
+75
+100
+125
+150
W
O
,
μ
J
10A, 40C1/50C1
10A, 40E1/50E1
20A, 40C1/50C1
20A, 40E1/50E1
V
GE
= 10V, V
CE(CLP)
= 300V
L = 25
μ
H, R
G
= 25
500
375
250
125
0
V
C
,
V
G
,
10
4
0
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
TIME (
μ
s)
GATE-
EMITTER
VOLTAGE
R
L
= 25
I
G(REF)
= 0.76mA
V
GE
= 10V
COLLECTOR-EMITTER VOLTAGE
V
CC
= 0.25BV
CES
V
CC
= BV
CES
8
6
2
BV
CES
NOTE:
FOR TURN-OFF GATE CURRENTS IN
EXCESS OF 3mA. V
TURN-OFF IS
NOT ACCURATELY REPRESENTED
BY THIS NORMALIZATION.
20V
0V
R
GEN
= 50
1/R
G
= 1/R
GEN
+ 1/R
GE
R
GE
= 50
L = 25
μ
H
V
CE(CLP)
=
300V
R
L
= 4
V
CC
80V
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