參數(shù)資料
型號(hào)： HGTP15N40C1
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 15A, 20A, 400V and 500V N-Channel IGBTs
中文描述： 15 A, 400 V, N-CHANNEL IGBT, TO-220AB
文件頁數(shù)： 2/5頁
文件大?。?/td> 35K
代理商： HGTP15N40C1
3-62
Specifications HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
HGTH20N40C1, E1,
HGTP15N40C1, E1
HGTH20N50C1, E1,
HGTP15N50C1, E1
MIN
MAX
MIN
MAX
Collector-Emitter Breakdown
Voltage
BV
CES
I
C
= 1mA, V
GE
= 0
400
-
500
-
V
Gate Threshold Voltage
V
GE(TH)
V
GE
= V
CE
, I
C
= 1mA
2.0
4.5
2.0
4.5
V
Zero-Gate Voltage Collector
Current
I
CES
V
CE
= 400V, T
C
= +25
o
C
-
250
-
-
μ
A
V
CE
= 500V, T
C
= +25
o
C
-
-
-
250
μ
A
V
CE
= 400V, T
C
= +125
o
C
-
1000
-
-
μ
A
V
CE
= 500V, T
C
= +125
o
C
-
-
-
1000
μ
A
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
20V, V
CE
= 0
-
100
-
100
nA
Reverse Collector-Emitter
Leakage Current
I
CE
R
GE
= 0
, V
EC
= 5V
-
-5
-
-5
mA
Collector-Emitter on Voltage
V
CE(ON)
I
C
= 20A, V
GE
= 10V
-
2.5
-
2.5
V
I
C
= 35A, V
GE
= 20V
-
3.2
-
3.2
V
Gate-Emitter Plateau Voltage
V
GEP
I
C
= 10A, V
CE
= 10V
-
6 (Typ)
-
6 (Typ)
V
On-State Gate Charge
Q
G(ON)
I
C
= 10A, V
CE
= 10V
-
33 (Typ)
-
33 (Typ)
nC
Turn-On Delay Time
t
D(ON)I
I
C
= 20A, V
CE(CLP)
= 300V,
L = 25
μ
H, T
J
= +100
o
C,
V
GE
= 10V, R
G
= 25
-
50
-
50
ns
Rise Time
t
RI
-
50
-
50
ns
Turn-Off Delay Time
t
D(OFF)I
-
400
-
400
ns
Fall Time
t
FI
40E1, 50E1
680 (Typ)
1000
680 (Typ)
1000
ns
40C1, 50C1
400
500
400
500
ns
Turn-Off Energy Loss per Cycle
(Off Switching Dissipation =
W
OFF
x Frequency)
W
OFF
I
C
= 10A, V
CE(CLP)
= 300V,
L = 25
μ
H, T
J
= +100
o
C,
V
GE
= 10V, R
G
= 25
40E1, 50E1
1810 (Typ)
μ
J
40C1, 50C1
1070 (Typ)
μ
J
Thermal Resistance
Junction-to-Case
R
θ
JC
HGTH, HGTM
-
1.25
-
1.25
o
C/W
HGTP
-
1.67
-
1.67
o
C/W
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
相關(guān)PDF資料
PDF描述
HGTP15N40E1 15A, 20A, 400V and 500V N-Channel IGBTs
HGTP15N50E1 15A, 20A, 400V and 500V N-Channel IGBTs
HGTH20N40C1 CAP 0.033UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
HGTP3N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S3N60A4DS 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTP15N40E1 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTP15N50C1 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTP15N50E1 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTP1N120BN 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5.3A, 1200V, NPT Series N-Channel IGBT
HGTP1N120BND 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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