- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370580 > HGTP12N60D1 (INTERSIL CORP) 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN PDF資料下載
參數(shù)資料
| 型號： | HGTP12N60D1 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 21 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 131K |
| 代理商： | HGTP12N60D1 |
3-31
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR-EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE
FIGURE 5. DC COLLECTOR CURRENT AS A FUNCTION OF
CASE TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
I
C
,
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
4
6
8
10
12
0
10
20
40
50
60
70
14
30
80
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
CE
= 10V
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -40
o
C
I
C
,
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s, DUTY CYCLE <0.5%, T
C
= 25
o
C
0
0
2
4
6
8
10
10
20
30
12.0V
8.5V
9.0V
8.0V
7.5V
7.0V
V
GE
= 15.0V
40
50
60
70
80
10.0V
I
C
,
0
30
0
1
2
3
4
5
40
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
10
20
50
70
80
60
I
C
,
0
30
0
1
2
3
4
5
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 150
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
10
20
40
50
60
70
80
25
50
75
100
125
150
0
5
10
15
20
25
I
C
,
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
I
S
,
20
60
80
120
t
S
,
μ
s
10
11
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
12
14
15
13
140
100
40
I
SC
t
SC
5
10
15
20
V
CE
= 360V, R
GE
= 25
, T
J
= 125
o
C
HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTP12N60A4 | 600V, SMPS Series N-Channel IGBT |
| HGTP12N60B3 | 27A, 600V, UFS Series N-Channel IGBTs |
| HGTP12N60A4 | 600V, SMPS Series N-Channel IGBTs |
| HGTP12N60C3 | XC9572-10PCG44C |
| HH-105 | Hybrid Junction 20 - 300 MHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP14N0FVLR4600 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP14N36G3VL | 功能描述:IGBT 晶體管 14a 380V Logic Level RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP14N37G3VL | 功能描述:IGBT 晶體管 14A 370V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP14N40F3VL | 功能描述:IGBT 晶體管 400V/14A/TF<1.2US RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP14N41G3VL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 445V V(BR)CES | TO-220AB |
發(fā)布緊急采購，3分鐘左右您將得到回復。