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參數(shù)資料
| 型號(hào)： | HGTH20N40C1D |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | CAP 0.056UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 |
| 中文描述： | 20 A, 400 V, N-CHANNEL IGBT, TO-218AC |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 35K |
| 代理商： | HGTH20N40C1D |
3-80
HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D
FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF
SWITCHING LOSS/CYCLE
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT (REFER TO APPLICATION
NOTES AN7254 AND AN7260)
FIGURE 15. TYPICAL DIODE EMITTER-COLLECTOR
VOLTAGE vs CURRENT
FIGURE 16. TYPICAL DIODE REVERSE RECOVERY TIME
Test Circuit
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
Typical Performance Curves
(Continued)
1000
900
800
700
600
500
400
300
200
100
0
+25
+50
T
J
, JUNCTION TEMPERATURE (
o
C)
+75
+100
+125
+150
W
O
,
μ
J
10A, 40C1D/50C1D
10A, 40E1D/50E1D
20A, 40C1D/50C1D
20A, 40E1D/50E1D
V
GE
= 10V, V
CE(CLP)
= 300V
L = 25
μ
H, R
G
= 25
GATE
EMITTER
VOLTAGE
V
CC
= BV
CES
500
375
250
125
0
10
8
6
4
2
0
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
TIME (
μ
s)
V
C
,
V
G
,
NOTE: For Turn-Off gate currents in excess of 3mA. V
Turn-Off
is not accurately represented by this normalization.
R
= 25
I
G
(REF) = 0.76mA
V
GE
= 10V
COLLECTOR-EMITTER VOLTAGE
V
CC
= 0.25 BV
CES
100
10
1.0
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
EC
, EMITTER-COLLECTOR VOLTAGE (V)
I
E
,
T
J
= +150
o
C
T
J
= +100
o
C
T
J
= +25
o
C
T
J
= -50
o
C
t
R
,
I
EC
, EMITTER-COLLECTOR CURRENT (A)
60
50
40
30
20
10
0
2
4
6
8
10
12
14
16
18
20
TYPICAL REVERSE RECOVERY TIME
dI
EC
/dt
≥
100A/
μ
s
V
R
= 30V, T
J
= +25
o
C
20V
0V
R
GEN
= 50
1/R
G
= 1/R
GEN
+ 1/R
GE
R
GE
= 50
L = 25
μ
H
V
CE(CLP)
=
300V
R
L
= 4
V
CC
100V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTH20N40E1 | 制造商:Harris Corporation 功能描述: |
| HGTH20N40E1D | 制造商:Harris Corporation 功能描述: |
| HGTH20N50C1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTH20N50C1D | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
| HGTH20N50E1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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