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參數(shù)資料
| 型號(hào)： | HGTH20N40C1 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | CAP 0.033UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 |
| 中文描述： | 20 A, 400 V, N-CHANNEL IGBT, TO-218AC |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 35K |
| 代理商： | HGTH20N40C1 |
3-64
HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1
FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE
FIGURE 8. TYPICAL V
CE(ON)
vs TEMPERATURE
FIGURE 9. TYPICAL TURN-OFF DELAY TIME
FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
FIGURE 11. TYPICAL FALL TIME (I
C
= 10A)
FIGURE 12. TYPICAL FALL TIME (I
C
= 20A)
Typical Performance Curves
(Continued)
2250
1800
1350
900
450
0
C
0
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
f = 1MHz
CISS
COSS
CRSS
2700
3.00
2.75
2.50
2.25
2.00
1.75
1.50
+25
+50
T
J
, JUNCTION TEMPERATURE (
o
C)
+75
+100
+125
+150
V
C
,
I
C
= 10A, V
GE
= 15V
I
C
= 10A, V
GE
= 10V
I
C
= 20A, V
GE
= 15V
I
C
= 20A, V
GE
= 10V
400
300
200
100
0
+25
+50
T
J
, JUNCTION TEMPERATURE (
o
C)
+75
+100
+125
+150
t
D
,
I
C
= 20A, V
GE
= 10V, V
CL
= 300V
L = 25
μ
H, R
G
= 25
V
GE
V
CE
I
C
W
OFF
=
∫
I
C
*
V
CE
dt
800
700
600
500
400
300
200
100
0
+25
+50
T
J
, JUNCTION TEMPERATURE (
o
C)
+75
+100
+125
+150
t
F
,
I
C
= 10A, V
GE
= 10V, V
CL
= 300V
L = 25
μ
H, R
G
= 25
40C1/50C1
40E1/50E1
800
700
600
500
400
300
200
100
0
+25
+50
T
J
, JUNCTION TEMPERATURE (
o
C)
+75
+100
+125
+150
t
F
,
I
C
= 20A, V
GE
= 10V, V
CL
= 300V
L = 25
μ
H, R
G
= 25
40C1/50C1
40E1/50E1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTH20N40C1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTH20N40E1 | 制造商:Harris Corporation 功能描述: |
| HGTH20N40E1D | 制造商:Harris Corporation 功能描述: |
| HGTH20N50C1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTH20N50C1D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
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